Abstract: A system and method for monitoring dynamic scopes in a runtime environment is disclosed. The system and method utilizes an algorithm which may be applied to both synchronous and asynchronous invocations. The method comprises determining an initial scope of a source component, the initial scope being a scope of the source component upon providing a synchronous call to invoke a target component. The scope declaration specified by the target component is determined. A resultant scope present upon invocation of the target component is then determined. The resultant scope is determined based on the initial scope of the source component and the scope declaration specified by the target component. A record is stored in a centralized location identifying the resultant scope, and the target component as a participant in the resultant scope.

Abstract: A system and method for monitoring dynamic scopes in a runtime environment is disclosed. The system and method utilizes an algorithm which may be applied to both synchronous and asynchronous invocations. The method comprises determining an initial scope of a source component, the initial scope being a scope of the source component upon providing a synchronous call to invoke a target component. The scope declaration specified by the target component is determined. A resultant scope present upon invocation of the target component is then determined. The resultant scope is determined based on the initial scope of the source component and the scope declaration specified by the target component. A record is stored in a centralized location identifying the resultant scope, and the target component as a participant in the resultant scope.

Abstract: Punch-through vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an exposed upper surface of a lower metal feature, e.g. portions exposed by penetrating and undercutting an anti-reflective coating. A metal such as tungsten is subsequently deposited to fill the punch-through via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H2/N2 plasma to lower its resistivity. Moreover, the thickness of the anti-reflective coating can be reduced and the process window for etching the via widened.

Abstract: A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.

Abstract: A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.

Abstract: Borderless vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an undercut, etched side surface of a lower metal feature. A metal, such as tungsten, is subsequently deposited to fill the borderless via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H.sub.2 /N.sub.2 plasma to lower its resistivity.

Abstract: Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.

Abstract: Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.

Abstract: Leading and trailing metal features in a dense array of conductive lines bordering an open field are formed with side surfaces that gradually taper in the direction of the open field toward an underlying substrate. Each side surface bordering the open field is formed with a sufficient slope to reduce cracking of the subsequently deposited dielectric gap fill layer at high stress areas bordering the open field.

Abstract: Borderless vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an undercut, etched side surface of a lower metal feature. A metal, such as tungsten, is subsequently deposited to fill the borderless via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H.sub.2 /N.sub.2 plasma to lower its resistivity.

Abstract: Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.