Abstract: A movable control or reception chamber is provided at the loading-unloading chamber of a diffusion furnace to control the environment around the wafers both before and after the wafers are removed from processing in the furnace tube. The reception chamber is capable of controlling the heat-up temperature prior to insertion of the wafers into the furnace while during the cool-down phase the heat given off is both controlled and prevented from being dissipated into the room.

Abstract: An apparatus for simultaneously processing a plurality of substrates comprises at least one novel chamber wherein at least one processing step is performed. Each chamber contains a plurality of spindles each having a substrate receiving surface upon which a substrate may be placed. Each of the spindles is at a different height from the floor of the chamber. Preferably the spindles are aligned in a single row according to height. Further, the chamber is provided with means for dispensing processing materials thereinto. The apparatus further comprises means for delivering a plurality of substrates to and from the processing chamber.