Abstract: Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 ??-cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 ??-cm for films of 50 nm and thicker, less than 9.5 ??-cm for films of 35 nm and thicker, less than 11 ??-cm for films of 20 nm and thicker, less than 15 ??-cm for films of 10 nm and thicker or less than 20 ??-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

Abstract: Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 ??-cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 ??-cm for films of 50 nm and thicker, less than 9.5 ??-cm for films of 35 nm and thicker, less than 11 ??-cm for films of 20 nm and thicker, less than 15 ??-cm for films of 10 nm and thicker or less than 20 ??-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

Abstract: Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 ?·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 ??-cm for films of 50 nm and thicker, less than 9.5 ??-cm for films of 35 nm and thicker, less than 11 ??-cm for films of 20 nm and thicker, less than 15 ??-cm for films of 10 nm and thicker or less than 20 ??-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

Abstract: Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.

Abstract: The hand washing assembly includes a hood defining a cavity within the hood, a valve structure located at least partially within the cavity, and a lever handle. The lever handle is operatively coupled to the valve structure and configured to move the valve structure between a first position in which the valve structure prevents a flow of fluid through the valve structure and a second position in which the valve structure permits the flow of fluid through the valve structure. The lever handle includes a contact surface positioned within the cavity and configured to move toward a top wall of the hood as the valve structure moves into the second position and configured to move away from the top wall as the valve structure moves into the first position.

Abstract: A method for generating a content feed includes receiving, from a content provider, a target content item and a policy for the target content item, specifying a prohibited classification of the content that cannot be published adjacent to the target content item. The method also includes identifying a slot in a content feed including multiple content items. A machine learning model is then accessed and applied to two adjacent content items that are adjacent to the slot to determine whether each of the adjacent content items is the prohibited classification. Responsive to determining that the adjacent content items are not the prohibited classification, the target content item is placed in the slot, and the content feed including the target content item is sent for display to a viewing user.

Abstract: Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 ?·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 ??-cm for films of 50 nm and thicker, less than 9.5 ??-cm for films of 35 nm and thicker, less than 11 ??-cm for films of 20 nm and thicker, less than 15 ??-cm for films of 10 nm and thicker or less than 20 ??-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

Abstract: The hand washing assembly includes a hood defining a cavity within the hood, a valve structure located at least partially within the cavity, and a lever handle. The lever handle is operatively coupled to the valve structure and configured to move the valve structure between a first position in which the valve structure prevents a flow of fluid through the valve structure and a second position in which the valve structure permits the flow of fluid through the valve structure. The lever handle includes a contact surface positioned within the cavity and configured to move toward a top wall of the hood as the valve structure moves into the second position and configured to move away from the top wall as the valve structure moves into the first position.

Abstract: A handwashing valve structure includes a mounting structure, a dispensing structure, and a control structure. The mounting structure is configured to attach to a liquid vessel. The dispensing structure is configured to dispense a liquid from the liquid vessel and is movable between a closed position and an open position. The control structure is configured to move the dispensing structure between the closed position and the open position. The control structure is configured to be moved by pressure from a portion of a user's body to move the dispensing structure from the closed position to the open position. The dispensing structure is configured to automatically move from the open position to the closed position in the absence of any pressure from the portion of the user's body onto the control structure.

Abstract: A mask includes: an intake valve panel comprising one or more intake valves, the intake valve panel further comprising an intake filter configured to filter the user's intake breath, the intake valve panel positioned in a center of the mask; one or more exhaust tubes, at least one of the one or more exhaust tubes comprising at least one of the exhaust valves, at least one of the exhaust tubes configured to conduct the user's exhale breath through the at least one of the exhaust valves and then out of the mask, at least one exhaust tube holding the at least one exhaust valve tightly while allowing the at least one exhaust valve to open and close freely; and a soft foam lining configured to tightly hold the mask against the user's face.

Abstract: A handwashing valve structure includes a mounting structure, a dispensing structure, and a control structure. The mounting structure is configured to attach to a liquid vessel. The dispensing structure is configured to dispense a liquid from the liquid vessel and is movable between a closed position and an open position. The control structure is configured to move the dispensing structure between the closed position and the open position. The control structure is configured to be moved by pressure from a portion of a user's body to move the dispensing structure from the closed position to the open position. The dispensing structure is configured to automatically move from the open position to the closed position in the absence of any pressure from the portion of the user's body onto the control structure.

Abstract: A handwashing valve structure includes a mounting structure, a dispensing structure, and a control structure. The mounting structure is configured to attach to a liquid vessel. The dispensing structure is configured to dispense a liquid from the liquid vessel and is movable between a closed position and an open position. The control structure is configured to move the dispensing structure between the closed position and the open position. The control structure is configured to be moved by pressure from a portion of a user's body to move the dispensing structure from the closed position to the open position. The dispensing structure is configured to automatically move from the open position to the closed position in the absence of any pressure from the portion of the user's body onto the control structure.

Abstract: A handwashing valve structure includes a mounting structure, a dispensing structure, and a control structure. The mounting structure is configured to attach to a liquid vessel. The dispensing structure is configured to dispense a liquid from the liquid vessel and is movable between a closed position and an open position. The control structure is configured to move the dispensing structure between the closed position and the open position. The control structure is configured to be moved by pressure from a portion of a user's body to move the dispensing structure from the closed position to the open position. The dispensing structure is configured to automatically move from the open position to the closed position in the absence of any pressure from the portion of the user's body onto the control structure.

Abstract: Methods, devices and systems are provided for making a shingled magnetic recording (SMR) hard disk drive operate with similar random access characteristics of a conventional hard drive despite the SMR disk having strict sequential write requirements. A virtual space manager manages a virtual address space, which is visible to a host system, and maps virtual addresses to logical addresses on the SMR disk. A logical space manager controls the placement of data on the SMR disk and ensures that writes to the disk comply with the sequential write requirements. The disk is subdivided into a plurality of stripes each comprising one or more blocks. When a block located within a stripe is to be rewritten with new data, the entire stripe is read from the SMR disk into a memory of the system, the stripe is modified in the memory to replace the previous data stored in the block with the new data, and the modified stripe is written to a new, next available stripe on the disk.