Patents by Inventor Robert Carlton Foulks, Sr.

Robert Carlton Foulks, Sr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of improving photoresist adhesion on a dielectric layer
    Patent number: 6010959
    Abstract: A method is provided for improving the adhesion between a photoresist layer and a dielectric, and an integrated circuit formed according to the same. A conformal dielectric layer is formed over the integrated circuit. An interlevel dielectric layer is formed over the conformal dielectric layer. The interlevel dielectric layer is doped such that the doping concentration allows the layer to reflow while partially inhibiting the adhesion of the doped layer to photoresist at an upper surface of the doped layer. An undoped dielectric layer is formed over the doped dielectric layer. A photoresist layer is formed and patterned over the undoped dielectric layer which adheres to the undoped dielectric layer. The undoped dielectric, the interlevel dielectric and the conformal dielectric layers are etched to form an opening exposing a portion of an underlying conductive region.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: January 4, 2000
    Assignee: STMicroelectronics, Inc.
    Inventors: John C. Sardella, Alexander Kalnitsky, Charles R. Spinner, III, Robert Carlton Foulks, Sr.
  • Contact structure for improving photoresist adhesion on a dielectric layer
    Patent number: 5877541
    Abstract: A method is provided for improving the adhesion between a photoresist layer and a dielectric, and an integrated circuit formed according to the same. A conformal dielectric layer is formed over the integrated circuit. An interlevel dielectric layer is formed over the conformal dielectric layer. The interlevel dielectric layer is doped such that the doping concentration allows the layer to reflow while partially inhibiting the adhesion of the doped layer to photoresist at an upper surface of the doped layer. An undoped dielectric layer is formed over the doped dielectric layer. A photoresist layer is formed and patterned over the undoped dielectric layer which adheres to the undoped dielectric layer. The undoped dielectric, the interlevel dielectric and the conformal dielectric layers are etched to form an opening exposing a portion of an underlying conductive region.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: March 2, 1999
    Assignee: STMicroelectronics, Inc.
    Inventors: John C. Sardella, Alexander Kalnitsky, Charles R. Spinner III, Robert Carlton Foulks, Sr.