Patents by Inventor Robert Charatan
Robert Charatan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230369028Abstract: A confinement ring for use in a plasma processing chamber includes a lower horizontal section, a vertical section, and a upper horizontal section. The lower horizontal section extends between an inner lower radius and an outer radius of the confinement ring, and includes an extension section that extends vertically downward at the inner lower radius. A plurality of slots is defined in the lower horizontal section, wherein each slot extends radially from an inner diameter to an outer diameter along the lower horizontal section. An inner slot radius of each slot at the inner diameter is defined to be less than an outer slot radius at the outer diameter. The upper horizontal section extends between an inner upper radius and the outer radius of the confinement ring, and the vertical section integrally continues the lower horizontal section to the upper horizontal section at the outer radius of the confinement ring.Type: ApplicationFiled: October 30, 2020Publication date: November 16, 2023Inventors: Adam Christopher Mace, Shahriar Memaran, Robert Charatan, Siwon Jang
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Patent number: 8614149Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: August 15, 2012Date of Patent: December 24, 2013Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S. M. Reza Sadjadi
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Patent number: 8529728Abstract: A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A method of forming a feature is also disclosed.Type: GrantFiled: August 14, 2008Date of Patent: September 10, 2013Assignee: Lam Research CorporationInventor: Robert Charatan
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Patent number: 8340827Abstract: A method for establishing a mass flow controller (MFC) control scheme, which is configured for reducing a time scale for gas delivery into a processing chamber, for a recipe is provided. The method includes identifying a set of delayed gas species utilized during execution of the recipe with a set of delivery time slower than a target delivery time scale. The method also includes establishing an initial overshoot strength and an initial overshoot duration for each gas specie of the set of delayed gas species. The method further includes establishing MFC control scheme by adjusting an MFC hardware for each gas specie during the execution of the recipe. Adjusting the MFC hardware includes applying the initial overshoot strength for the initial overshoot duration to determine if the MFC control scheme provides for each gas specie a pressure profile within a target accuracy of an equilibrium pressure for the processing chamber.Type: GrantFiled: June 3, 2009Date of Patent: December 25, 2012Assignee: Lam Research CorporationInventors: Gunsu Yun, Iqbal A. Shareef, Kurt Jorgensen, Robert Charatan
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Publication number: 20120309201Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: August 15, 2012Publication date: December 6, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
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Publication number: 20120279656Abstract: A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A method of forming a feature is also disclosed.Type: ApplicationFiled: August 14, 2008Publication date: November 8, 2012Inventor: Robert Charatan
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Patent number: 8268118Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: February 24, 2010Date of Patent: September 18, 2012Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S. M. Reza Sadjadi
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Publication number: 20100148317Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: February 24, 2010Publication date: June 17, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Sangheon LEE, Dae-Han CHOI, Jisoo KIM, Peter CIRIGLIANO, Zhisong HUANG, Robert CHARATAN, S.M. Reza SADJADI
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Patent number: 7695632Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: May 31, 2005Date of Patent: April 13, 2010Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
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Publication number: 20100038032Abstract: A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A method of forming a feature is also disclosed.Type: ApplicationFiled: August 14, 2008Publication date: February 18, 2010Inventor: Robert Charatan
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Patent number: 7479457Abstract: Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.Type: GrantFiled: September 8, 2005Date of Patent: January 20, 2009Assignee: Lam Research CorporationInventors: Cristian Paduraru, Alan Jensen, David Schaefer, Robert Charatan, Tom Choi
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Patent number: 7442649Abstract: A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.Type: GrantFiled: March 29, 2005Date of Patent: October 28, 2008Assignee: Lam Research CorporationInventors: Jisoo Kim, Sangheon Lee, Binet A. Worsham, Robert Charatan, S.M. Reza Sadjadi
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Patent number: 7427458Abstract: A method of forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A system for forming a feature is also disclosed.Type: GrantFiled: June 30, 2005Date of Patent: September 23, 2008Assignee: Lam Research CorporationInventor: Robert Charatan
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Publication number: 20070243713Abstract: A microwave source is used to create activated hydrogen in its ground state. An electron gun is used to boost the activated hydrogen into a metastable state by electron bombardment. The metastable activated hydrogen may then be used in a plasma etch to remove residue from a low k material.Type: ApplicationFiled: April 12, 2006Publication date: October 18, 2007Applicant: Lam Research CorporationInventor: Robert Charatan
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Patent number: 7205226Abstract: A method for etching a trench is provided. The method initiates with providing a substrate having a patterned feature. The method includes alternating between deposition of a protective layer onto inner surfaces of the patterned feature and etching the trench into the substrate. The alternating may be achieved through a gas modulation technique and in one embodiment, the deposition and the etching are performed in the same chamber, i.e., the substrate does not move to a different chamber between the etch and deposition processes. The alternating is continued until the trench is completed and then the trench is filled. A semiconductor processing system is also provided.Type: GrantFiled: May 25, 2005Date of Patent: April 17, 2007Assignee: Lam Research CorporationInventors: David Schaefer, Robert Charatan
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Publication number: 20070054496Abstract: Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.Type: ApplicationFiled: September 8, 2005Publication date: March 8, 2007Inventors: Cristian Paduraru, Alan Jensen, David Schaefer, Robert Charatan, Tom Choi
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Publication number: 20070004217Abstract: A method of forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A system for forming a feature is also disclosed.Type: ApplicationFiled: June 30, 2005Publication date: January 4, 2007Applicant: LAM RESEARCH CORPORATIONInventor: Robert Charatan
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Publication number: 20060266478Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: May 31, 2005Publication date: November 30, 2006Inventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
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Publication number: 20060223327Abstract: A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.Type: ApplicationFiled: March 29, 2005Publication date: October 5, 2006Inventors: Jisoo Kim, Sangheon Lee, Binet Worsham, Robert Charatan, S.M. Sadjadi
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Patent number: 7014539Abstract: An apparatus and method for minimizing the size of agglomerated particles in a polishing fluid is provided. The method includes positioning a polishing pad between a sacrificial member and a support member such that the sacrificial member is in communication with the polishing pad, thereby causing the agglomerated particles to separate. The apparatus includes a polishing pad and a polishing fluid condition. The polishing fluid conditioner includes a sacrificial member and a support member, wherein the sacrificial member is in communication with the polishing pad so as to cause the agglomerated particles to separate.Type: GrantFiled: November 18, 2004Date of Patent: March 21, 2006Assignee: Lam Research CorporationInventor: Robert Charatan