Patents by Inventor Robert Chebi
Robert Chebi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10037883Abstract: Embodiments described herein generally relate to an apparatus and methods for reducing the deposition of polymers in a semiconductor processing chamber. A heater jacket and heat sources are provided and may be configured to maintain a uniform temperature profile of the processing chamber. A method of maintaining a uniform temperature profile of a dielectric ceiling of the processing chamber is also provided.Type: GrantFiled: February 18, 2014Date of Patent: July 31, 2018Assignee: Applied Materials, Inc.Inventors: Robert Chebi, Alfredo Granados, Zhao H. Ceng, Jianqi Wang, Rajan Balesan
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Patent number: 9865472Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: GrantFiled: April 20, 2016Date of Patent: January 9, 2018Assignee: Lam Research CorporationInventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin Moore, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
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Patent number: 9673069Abstract: A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.Type: GrantFiled: July 18, 2013Date of Patent: June 6, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Yuri Trachuk, Robert Chebi, Carl Almgren
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Publication number: 20160233102Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: ApplicationFiled: April 20, 2016Publication date: August 11, 2016Inventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MOORE, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
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Patent number: 9330926Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: GrantFiled: December 18, 2008Date of Patent: May 3, 2016Assignee: Lam Research CorporationInventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin McDonnell, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
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Publication number: 20140273520Abstract: Embodiments described herein generally relate to an apparatus and methods for reducing the deposition of polymers in a semiconductor processing chamber. A heater jacket and heat sources are provided and may be configured to maintain a uniform temperature profile of the processing chamber. A method of maintaining a uniform temperature profile of a dielectric ceiling of the processing chamber is also provided.Type: ApplicationFiled: February 18, 2014Publication date: September 18, 2014Inventors: Robert CHEBI, Alfredo GRANADOS, Zhao H. CENG, Jianqi WANG, Rajan BALESAN
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Publication number: 20140162462Abstract: A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.Type: ApplicationFiled: July 18, 2013Publication date: June 12, 2014Applicant: APPLIED MATERIALS INC.Inventors: Yuri Trachuck, Robert Chebi, Carl Almgren
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Publication number: 20120103524Abstract: Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support.Type: ApplicationFiled: September 22, 2011Publication date: May 3, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Robert CHEBI, Alan CHESHIRE, Stanley DETMAR, Gabriel ROUPILLARD
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Publication number: 20110023779Abstract: A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.Type: ApplicationFiled: October 5, 2010Publication date: February 3, 2011Applicant: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Patent number: 7824519Abstract: A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.Type: GrantFiled: May 18, 2007Date of Patent: November 2, 2010Assignee: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Publication number: 20090184089Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: ApplicationFiled: December 18, 2008Publication date: July 23, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MCDONNELL, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
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Patent number: 7547635Abstract: A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x?1, y?1, and z?0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x?1 and y?4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.Type: GrantFiled: June 14, 2002Date of Patent: June 16, 2009Assignee: Lam Research CorporationInventors: Aaron Eppler, Mukund Srinivasan, Robert Chebi
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Patent number: 7476291Abstract: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.Type: GrantFiled: September 28, 2006Date of Patent: January 13, 2009Assignee: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Publication number: 20080286489Abstract: A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.Type: ApplicationFiled: May 18, 2007Publication date: November 20, 2008Applicant: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Publication number: 20080078744Abstract: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.Type: ApplicationFiled: September 28, 2006Publication date: April 3, 2008Applicant: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Publication number: 20070264841Abstract: Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.Type: ApplicationFiled: May 10, 2006Publication date: November 15, 2007Inventors: Robert Chebi, Jaroslaw Winniczek, Alan Miller, Gladys Lo
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Publication number: 20060219361Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: ApplicationFiled: April 1, 2005Publication date: October 5, 2006Inventors: Ing-Yann Wang, Jaroslaw Winniczek, David Cooperberg, Erik Edelberg, Robert Chebi
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Publication number: 20060201911Abstract: Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y?x and z?0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.Type: ApplicationFiled: May 9, 2006Publication date: September 14, 2006Inventors: Erik Edelberg, Robert Chebi, Gladys Lo
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Publication number: 20060073997Abstract: A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an ?,?-dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed.Type: ApplicationFiled: September 30, 2004Publication date: April 6, 2006Applicant: Lam Research corporationInventors: Oana Leonte, Robert Chebi
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Publication number: 20060051965Abstract: Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a hydrocarbon gas, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.Type: ApplicationFiled: September 7, 2004Publication date: March 9, 2006Inventors: Erik Edelberg, Robert Chebi, Alex Panchula