Patents by Inventor Robert Chodelka

Robert Chodelka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEM AND HIGH PRESSURE, HIGH TEMPERATURE APPARATUS FOR PRODUCING SYNTHETIC DIAMONDS
    Publication number: 20110126759
    Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.
    Type: Application
    Filed: January 28, 2011
    Publication date: June 2, 2011
    Applicant: THE GEMESIS CORPORATION
    Inventors: Robert CHODELKA, Hexiang ZHU, Alexander NOVIKOV
  • System and high pressure, high temperature apparatus for producing synthetic diamonds
    Patent number: 7887631
    Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: February 15, 2011
    Assignee: The Gemesis Corporation
    Inventors: Robert Chodelka, Hexiang Zhu, Alexander Novikov
  • Gasket material for use in high pressure, high temperature apparatus
    Publication number: 20070014965
    Abstract: A gasket comprises a material having a creep relaxation of about 5-40%, a sealability of about 0.10-0.50 ml/hr, compressibility of about 5-40% and a tensile strength of about 1000-5000 psi. The gasket is used in a high pressure, high temperature apparatus.
    Type: Application
    Filed: June 24, 2005
    Publication date: January 18, 2007
    Inventors: Robert Chodelka, Hexiang Zhu, Alexander Novikov, John Clement
  • System and high pressure, high temperature apparatus for producing synthetic diamonds
    Publication number: 20060288927
    Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.
    Type: Application
    Filed: June 24, 2005
    Publication date: December 28, 2006
    Inventors: Robert Chodelka, Hexiang Zhu, Alexander Novikov
  • Apparatus and method for growing a synthetic diamond
    Publication number: 20060292302
    Abstract: Disclosed herein is an apparatus and method for growing a synthetic diamond. The apparatus for growing a synthetic diamond comprises: a reaction area contained with a high pressure, high temperature apparatus; and a means for pulling a vacuum on the reaction area. The method for growing a synthetic diamond includes the steps of using a reaction area contained within a high pressure, high temperature apparatus; and pulling a vacuum on the reaction area.
    Type: Application
    Filed: June 24, 2005
    Publication date: December 28, 2006
    Inventors: Robert Chodelka, Hexiang Zhu, Reza Abbaschian, Nikolay Patrin, Alexander Novikov