Abstract: A device may determine a first resolution and aggregation for data collection from a network and may receive first PM data associated with the network, at the first resolution and aggregation. The device may calculate, based on the first PM data, a first parameter characteristic of a UE and may determine a trigger based on the first parameter characteristic and based on one or more of a root cause analysis, an application input, or a KPI. The device may identify a portion of the network that is associated with the trigger based on the first PM data and may determine a second resolution and aggregation for data collection from the portion of the network. The device may receive second PM data associated with the portion of the network, at the second resolution and aggregation and may calculate a second parameter characteristic of the UE based on the second PM data.

Abstract: System for monitoring intracranial compliance in a patient includes an intracranial pressure sensor, configured to obtain a measurement indicative of an intracranial pressure of a patient, a CO2 sensor, configured to obtain a measurement indicative of a CO2 level of the patient, and a processor, configured to determine an intracranial compliance from the measurements indicative of the intracranial pressure and the CO2 level. Methods for monitoring intracranial compliance in a patient are also provided.

Abstract: Aspects of the present disclosure provide a semiconductor structure. For example, the semiconductor structure can include a first lower semiconductor device having one or more first lower channels and first lower work function metal (WFM) covering the first lower channels, and a first upper semiconductor device stacked vertically over the first lower semiconductor device. The first upper semiconductor device can have one or more first upper channels and first upper WFM covering the first upper channels. The semiconductor structure can also include a monolayer formed on dielectric surfaces of the semiconductor structure, and an isolation dielectric deposited on the first lower WFM and between the first lower semiconductor device and the first upper semiconductor device to isolate the first lower semiconductor device from the first upper semiconductor device.

Abstract: Aspects of the present disclosure provide a method, which includes providing a semiconductor structure including a first lower semiconductor device and a first upper semiconductor device stacked vertically over the first lower semiconductor device. The first lower semiconductor device has one or more first lower channels. The first upper semiconductor device has one or more first upper channels. First work function metal (WFM) can cover the first lower channels and the first upper channels. The method can also include recessing the first WFM to uncover the first upper channels of the first upper semiconductor device, depositing a monolayer on uncovered dielectric surfaces of the semiconductor structure, depositing isolation dielectric on the first WFM of the first lower semiconductor device, and depositing second WFM to cover the first upper channels of the first upper semiconductor device. The isolation dielectric isolates the first lower semiconductor device from the first upper semiconductor device.

Abstract: A lifting device is provided that includes side members, top support members, a front shield member, hoist assemblies, and a load member. The side members may be movable between a collapsed position and an extended position. Each top support member may be carried by one of the side members. The front shield member may be extended between and pivotally attached to each of the side members. The front shield member may be movable between a collapsed position and an extended position. Each hoist assembly may be carried by one of the side members. The hoist assemblies may be movable between a collapsed position and an extended position. The load member may be connected to each top support member. The load member may be moved between a retracted position and a released position when the hoist assemblies move between the collapsed position and the extended position.

Abstract: Embodiments of methods are provided for thermal dry etching of a ruthenium (Ru) metal layer. In the disclosed embodiments, a substrate containing a Ru metal layer formed thereon is exposed to a gas pulse sequence, while the substrate is held at a relatively high substrate temperature (e.g., a temperature greater than or equal to about 160° C.), to provide thermal etching of the Ru metal layer. As described further herein, the gas pulse sequence may generally include a plurality of gas pulses, which are supplied to the substrate sequentially with substantially no overlap between gas pulses. The gas pulses supplied to the substrate form: (i) volatile reaction products that are vaporized from the Ru surface, and (ii) non-volatile oxide surface layers that are removed from the Ru surface by the next gas pulse, resulting in atomic layer etching (ALE) of the Ru metal layer.

Abstract: A method of processing a substrate that includes: forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film including a tin alkenoxide moiety by exposing the substrate to a tin-containing precursor and exposing the substrate to an oxygen-containing precursor that reacts with the tin from the tin-containing precursor to form the tin alkenoxide; and patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.

Abstract: A method for area selective deposition. The method includes providing a substrate in a process chamber, the substrate containing a growth surface and a non-growth surface, and selectively depositing a metal-containing film on the growth surface relative to the non-grown surface by exposing the substrate to a first gas flow containing carbon monoxide (CO) gas to form adsorbed CO on the substrate, and exposing the substrate to a second gas flow containing a metal carbonyl precursor, where the adsorbed CO reduces decomposition rate of the metal carbonyl precursor on the non-growth surface.

Abstract: A method of processing a substrate that includes forming over the substrate an extreme ultraviolet (EUV)-active photoresist film including a network of metal oxide terminated with alkoxy groups and patterning the EUV-active photoresist film with EUV lithography.

Abstract: A memory cell arrangement and methods are disclosed, wherein the memory cell arrangement includes: a substrate including a plurality of three-dimensional structures; a plurality of memory cells; and a plurality of sets of control lines for selectively addressing the plurality of memory cells, wherein each memory cell includes a respective one of the plurality of three-dimensional structures and a memory layer stack disposed over the three-dimensional structure, the memory layer stack including a first electrode, a second electrode, and a memory element forming a memory capacitor; wherein the memory element substantially consists of one or more transition-metal-oxides, wherein the second electrode includes an electrically conductive electrode layer substantially consisting of tungsten and a functional layer substantially consisting of a metal nitride or a metal-oxynitride, wherein the functional layer is disposed between the memory element and the electrically conductive electrode layer and in direct contact w

Abstract: A method for representing an intended prosody in synthesized speech includes receiving a text utterance having at least one word, and selecting an utterance embedding for the text utterance. Each word in the text utterance has at least one syllable and each syllable has at least one phoneme. The utterance embedding represents an intended prosody. For each syllable, using the selected utterance embedding, the method also includes: predicting a duration of the syllable by decoding a prosodic syllable embedding for the syllable based on attention by an attention mechanism to linguistic features of each phoneme of the syllable and generating a plurality of fixed-length predicted frames based on the predicted duration for the syllable.

Abstract: Techniques are disclosed for automatically inferring software-defined network policies from the observed workload in a computing environment. The disclosed techniques include monitoring network traffic flow originating from network interfaces corresponding to containers that execute components of an application, recording details of a new network connection or a change in the existing network connection, obtaining information concerning the components of the application, identifying metadata for a component involved in the new network connection or the change in an existing network connection based on a comparison of the details of the new network connection or a change in the existing network connection and the information concerning the components of the application, generating a network policy for the component using at least the metadata for the component, and integrating the network policy for the component into a deployment package for the application.

Abstract: In certain embodiments, a method for designing a semiconductor device includes generating a 2D design for fabricating chiplets on a substrate. The chiplets are component levels for a multi-chip integrated circuit. The 2D design includes a first layout for alignment features and semiconductor structures to be formed on a first surface of a first chiplet and a second layout for alignment features and semiconductor structures to be formed on a first surface of a second chiplet. The first and second chiplets are adjacent on the substrate. The second layout is a mirror image of the first layout across a reference line shared by the first and second chiplets. The first surfaces of the first and second chiplets are both either top or bottom surfaces. The method further includes generating one or more photomasks according to the design.

Abstract: A semiconductor device including at least one barrier-protected metal feature and related methods of fabrication are described. A method of making a semiconductor device includes forming a barrier layer by steps including providing a metal precursor layer and converting the metal precursor layer into one or more two-dimensional monolayers including at least one chalcogenide. The method also includes causing the barrier layer to be in contact with at least one metal feature in a manner effective to provide the at least one barrier-protected metal feature.

Abstract: Embodiments of a wet etch process and methods are disclosed herein to provide uniform wet etching of material formed within features (e.g., trenches, holes, slits, etc.), and on more planar areas of a patterned substrate, when a critical dimension (CD) of the features is relatively small compared to the more planar areas of the patterned substrate. In the present disclosure, uniform wet etching is provided by ensuring that wall surfaces adjacent to the material being etched exhibit a neutral surface charge when exposed to the etch solution used to etch the material.

Abstract: Techniques are disclosed for automatically inferring software-defined network policies from the observed workload in a computing environment. The disclosed techniques include monitoring network traffic flow originating from network interfaces corresponding to containers that execute components of an application, recording details of a new network connection or a change in the existing network connection, obtaining information concerning the components of the application, identifying metadata for a component involved in the new network connection or the change in an existing network connection based on a comparison of the details of the new network connection or a change in the existing network connection and the information concerning the components of the application, generating a network policy for the component using at least the metadata for the component, and integrating the network policy for the component into a deployment package for the application.

Abstract: A method (400) for representing an intended prosody in synthesized speech includes receiving a text utterance (310) having at least one word (240), and selecting an utterance embedding (204) for the text utterance. Each word in the text utterance has at least one syllable (230) and each syllable has at least one phoneme (220). The utterance embedding represents an intended prosody. For each syllable, using the selected utterance embedding, the method also includes: predicting a duration (238) of the syllable by decoding a prosodic syllable embedding (232, 234) for the syllable based on attention by an attention mechanism (340) to linguistic features (222) of each phoneme of the syllable and generating a plurality of fixed-length predicted frames (260) based on the predicted duration for the syllable.

Abstract: A lifting device is provided that includes side members, top support members, a front shield member, hoist assemblies, and a load member. The side members may be movable between a collapsed position and an extended position. Each top support member may be carried by one of the side members. The front shield member may be extended between and pivotally attached to each of the side members. The front shield member may be movable between a collapsed position and an extended position. Each hoist assembly may be carried by one of the side members. The hoist assemblies may be movable between a collapsed position and an extended position. The load member may be connected to each top support member. The load member may be moved between a retracted position and a released position when the hoist assemblies move between the collapsed position and the extended position.

Abstract: A method for generating frame values using a key frame network includes receiving a text utterance having at least one phoneme, and for each respective phoneme of the at least one phoneme, predicting, using a predictive model, a fixed quantity of key frames. Each respective key frame of the fixed quantity of key frames includes a representation of a component of the respective phoneme. The method also includes generating, using the fixed quantity of key frames, a plurality of frame values. Here, each respective frame value of the plurality of frame values is representative of a fixed-duration of audio.

Abstract: Embodiments of methods are provided for thermal dry etching of a ruthenium (Ru) metal layer. In the disclosed embodiments, a substrate containing a Ru metal layer formed thereon is exposed to a gas pulse sequence, while the substrate is held at a relatively high substrate temperature (e.g., a temperature greater than or equal to about 160° C.), to provide thermal etching of the Ru metal layer. As described further herein, the gas pulse sequence may generally include a plurality of gas pulses, which are supplied to the substrate sequentially with substantially no overlap between gas pulses. The gas pulses supplied to the substrate form: (i) volatile reaction products that are vaporized from the Ru surface, and (ii) non-volatile oxide surface layers that are removed from the Ru surface by the next gas pulse, resulting in atomic layer etching (ALE) of the Ru metal layer.