Patents by Inventor Robert Cort Haddon

Robert Cort Haddon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10908025
    Abstract: A method of preparation of focal plane arrays of infrared bolometers includes processing carbon nanotubes to increase a temperature coefficient of resistance (TCR), followed by patterning to form focal plane arrays for infrared imaging.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: February 2, 2021
    Assignee: CARBON SOLUTIONS, INC.
    Inventors: Elena Borisova Bekyarova, Mikhail Efimovich Itkis, Ramesh Palanisamy, Robert Cort Haddon
  • Publication number: 20180156668
    Abstract: A method of preparation of focal plane arrays of infrared bolometers includes processing carbon nanotubes to increase a temperature coefficient of resistance (TCR), followed by patterning to form focal plane arrays for infrared imaging.
    Type: Application
    Filed: December 7, 2017
    Publication date: June 7, 2018
    Inventors: Elena Borisova Bekyarova, Mikhail Efimovich Itkis, Ramesh Palanisamy, Robert Cort Haddon
  • Patent number: 6278127
    Abstract: Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.
    Type: Grant
    Filed: May 15, 1995
    Date of Patent: August 21, 2001
    Assignee: Agere Systems Guardian Corp.
    Inventors: Ananth Dodabalapur, Robert Cort Haddon, Howard Edan Katz, Luisa Torsi
  • Patent number: 5698497
    Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.
    Type: Grant
    Filed: June 13, 1994
    Date of Patent: December 16, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Cort Haddon, Arthur Foster Hebard, Donald Winslow Murphy, Matthew Jonathan Rosseinsky
  • Patent number: 5693977
    Abstract: An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C.sub.60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.
    Type: Grant
    Filed: September 5, 1996
    Date of Patent: December 2, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Cort Haddon, Arthur Foster Hebard, Thomas Theodorus Marie Palstra
  • Patent number: 5659181
    Abstract: A previously unknown phase of .alpha.-hexathienyl, designated .alpha.-6T/HT, exhibits diffraction peaks at 2.theta.=4.31.degree., 8.64.degree., 12.96.degree., 17.32.degree., 26.15.degree. and 29.08.degree. in a CuK.sub..alpha. powder X-ray diffraction pattern, and is expected to have properties (e.g., high hole mobility) that make the phase desirable for use in, e.g., thin film transistors. Substitution of thin films of .alpha.-6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.
    Type: Grant
    Filed: March 2, 1995
    Date of Patent: August 19, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Paul Michael Bridenbaugh, Robert McLemore Fleming, Robert Cort Haddon, Robert Alfred Laudise, Theo Siegrist