Abstract: A transistor device includes a semiconductor substrate and a gate structure formed over the substrate. When fabricating the transistor device, at least one dielectric layer may be formed over ohmic contact structures of the transistor device, which may mitigate migration of material, such as metal, from the ohmic contact structures onto sensitive surfaces of the transistor device during subsequent fabrication processes. The transistor device may include one or more dielectric spacers, including at least one dielectric spacer disposed at a side wall of a gate channel through which gate structure contacts the substrate. The transistor device may include a field plate formed at least partially over the gate structure, the field plate having one or more stepped portions, which may improve linearity performance of the transistor device.

Abstract: The system and method for providing antimicrobial and/or antiviral characteristics to substrates via an additive process for providing safe handling and reduction of cross contaminations from person to person from handling, shipping, storage and use of papers, boxes, liners, hospital barriers, respirator filters and liners, hospital curtains, masks, draperies, bed liners, and the like.

Abstract: A method of making a semiconductor device is provided for depositing, patterning, and developing photoresist (1703, 1704) on an underlying layer located on a backside of a wafer having a frontside on which an integrated circuit die are formed over a shared wafer semiconductor substrate and arranged in a grid, thereby forming a patterned photoresist mask with a unique set of one or more openings which are used to selectively etch the underlying layer to form, on each integrated circuit die, a unique die mark identifier pattern of etched openings in the underlying layer corresponding to the unique set of one or more openings in the patterned photoresist mask (1705), where the patterned photoresist mask is removed (1706) from the backside of the wafer before singulating the wafer to form a plurality of integrated circuit devices (1708) which each include a unique die marking.

Abstract: A method of making a semiconductor device is provided for depositing, patterning, and developing photoresist (1703, 1704) on an underlying layer located on a backside of a wafer having a frontside on which an integrated circuit die are formed over a shared wafer semiconductor substrate and arranged in a grid, thereby forming a patterned photoresist mask with a unique set of one or more openings which are used to selectively etch the underlying layer to form, on each integrated circuit die, a unique die mark identifier pattern of etched openings in the underlying layer corresponding to the unique set of one or more openings in the patterned photoresist mask (1705), where the patterned photoresist mask is removed (1706) from the backside of the wafer before singulating the wafer to form a plurality of integrated circuit devices (1708) which each include a unique die marking.

Abstract: Embodiments are directed to declaratively managing software applications, dynamically applying configuration changes to a specified software application based on a service level objective (SLO) and to efficiently performing an impact analysis for a specified service level agreement SLO.

Abstract: Embodiments are directed to declaratively managing software applications, dynamically applying configuration changes to a specified software application based on a service level objective (SLO) and to efficiently performing an impact analysis for a specified service level agreement SLO.

Abstract: Embodiments are directed to declaratively managing software applications, dynamically applying configuration changes to a specified software application based on a service level objective (SLO) and to efficiently performing an impact analysis for a specified service level agreement SLO.

Abstract: Embodiments are directed to declaratively managing software applications, dynamically applying configuration changes to a specified software application based on a service level objective (SLO) and to efficiently performing an impact analysis for a specified service level agreement SLO.

Abstract: The disclosure is directed to an integrated glove including first and second substrate layers. The first substrate layer overlies the second substrate layer to define a volume therebetween configured to receive a wearer's hand. The integrated glove also includes first and second gas impermeable barrier layers respectively melt laminated to the first and second substrate layers. The first and second gas impermeable barrier layers extend beyond an outer contour of the first and second substrate layers and are melt laminated together to form a seam portion. The integrated glove has a breakthrough time greater than 60 minutes when exposed to NFPA 1991 industrial chemicals.