Abstract: A finline structure comprises a dielectric substrate-mounted circuit disposed within a waveguide having on the substrate integrated distributed capacitance elements at least partially formed by laterally separated metallization layers. Thin-film construction techniques may be employed in construction. In general, the distributed capacitance elements permit the biasing of a plurality of circuit elements in a finline transmission medium. In selected structures, r.f. continuity is effected between traces and metallization layers while maintaining d.c. isolation. Examples are described of circuits which can incorporate an integrated capacitor, including but not limited to detectors, r.f. modulators, r.f. attenuators, amplifiers, and multipliers. According to the invention, a plurality of elements, as well as multiple port elements, may be selectively biased while retaining d.c. isolation and r.f. continuity.

Abstract: A microwave frequency multiplier employs a first diode and a second diode each coupled in anti-parallel relationship across a signal input of a finline structure, each of the diodes being associated with signal-induced biasing elements for self biasing the diodes. A bias is caused to occur at internal nodes which increase with increased input power for a broad range of input power levels. The presence of such biasing results in waveform clipping at higher signal levels. Relative to prior art, the conversion loss will remain optimum up to high input power over an entire high-power input range. Additional external bias may be employed in alternative embodiments.