Abstract: A memory includes byte aligned column redundancy capabilities for use in repairing the memory when a defective column is present. The memory array includes a repair/redundant column for use in repairing the memory when another column of the memory array is defective. The memory also has a redundant write multiplexer to select, when a defective column is present in the memory array, an input data bit to be written to the redundant column. A first input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the first column group and a second input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the second column group.

Abstract: Briefly, in accordance with one embodiment of the invention, a method by which one or more ways of a cache may be locked so that they are not overwritten with data. Further, the ways of a cache that are locked may be given higher priority than the most recently used or accessed ways.

Abstract: A memory includes byte aligned column redundancy capabilities for use in repairing the memory when a defective column is present. The memory array includes a repair/redundant column for use in repairing the memory when another column of the memory array is defective. The memory also has a redundant write multiplexer to select, when a defective column is present in the memory array, an input data bit to be written to the redundant column. A first input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the first column group and a second input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the second column group.

Abstract: A memory includes byte aligned column redundancy capabilities for use in repairing the memory when a defective column is present. The memory array includes a repair/redundant column for use in repairing the memory when another column of the memory array is defective. The memory also has a redundant write multiplexer to select, when a defective column is present in the memory array, an input data bit to be written to the redundant column. A first input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the first column group and a second input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the second column group.

Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit has a sense amp connected to a plurality of bit lines with bit line transistors. Each of the bit line transistors may be connected to a sense amp enable transistor so that together, the coupling and sense amp enable transistors connect the sense amp to a power supply voltage.

Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit has a sense amp connected to a plurality of bit lines with bit line transistors. Each of the bit line transistors may be connected to a sense amp enable transistor so that together, the coupling and sense amp enable transistors connect the sense amp to a power supply voltage.