Abstract: Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment.

Abstract: Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment.

Abstract: A light emitting device providing a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission.

Abstract: Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.

Abstract: A light emitting device is constructed so as to provide a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission.

Abstract: A light emitting device is constructed so as to provide a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission.