Abstract: Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.

Abstract: Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead. In one embodiment of the present invention, the system is capable of utilizing silane as a silicon source gas.

Abstract: A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature non-uniformities are a common cause of slip. Additional aspects of the invention provide for improved thermal shielding of the edges and top surface of the susceptor. Thicker susceptors also improve temperature uniformity.

Abstract: A structure and method for holding a susceptor in a single-wafer RF heated CVD reactor allows the center portion of the susceptor to be heated and prevents susceptor and reactor damage due to overdriving and the susceptor from losing contact with a rotatable rod during thermal expansion. A plug, located on the bottom surface of the susceptor, heated by RF energy subsequently heats the center portion of the susceptor, thereby providing constant temperature gradients across the susceptor. The plug is connected to a rod which is contained in an upper tube and extends into a lower tube. The upper tube is connected to the susceptor via a locking mechanism. An upper spring in the upper tube applies a downward force on the upper tube such that an upward force on the bottom of the susceptor compresses the upper spring, thereby relieving stress on the susceptor and preventing damage due to overdriving.

Abstract: A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates process or reactant gases from the pressure chamber. The reactor also includes a gas injection system which pre-heats and injects diffused process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.

Abstract: A structure and method are disclosed which allow for a tighter control of the temperature across a wafer substrate. In accordance with the present invention, a wafer to be processed is heated to a constant and uniform temperature by an RF induction coil including a plurality of heating zones each of which being shunted by an associated capacitor tuned to a specific frequency. By adjusting the time during which current of a particular frequency is provided to the induction coil, current flow within, and thus the heat generated in, each of the zones may be independently controlled. Since the heat generated in the susceptor quickly changes in response to changes in current flow therein, both deviations of the wafer temperature from the processing temperature and temperature gradients across the surface of the wafer may be quickly corrected. This superior thermal response results in the present invention maintaining a wafer at a uniform temperature during heating and cooling with increased accuracy and precision.

Abstract: A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates process gases from the pressure chamber. In this manner, each of the chambers may be designed specifically for its intended purpose. The pressure chamber is of a bell-jar shaped designed to sustain a low-pressure environment. The reaction chamber is of a parallel-plate shaped designed for optimized process gas flow. The reaction chamber is isolated from the pressure chamber such that process gases present in the reaction chamber are separated from and cannot come into contact with the inner surface of the bell jar. In this manner, process gases do not deposit on the walls of the pressure chamber. In one embodiment, the wafer is heated by induction coils external to the process chamber. In this manner, the heat transferred to the wafer is not dependent upon the thickness of deposition layers formed on the walls of the reaction chamber.

Abstract: A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates reactant gases from the pressure chamber. The reactor also includes a gas injection system which injects process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.