Abstract: Compositions suitable for the electrodeposition of copper on substrates, such as electronic device substrates, are provided. Methods of depositing copper layers on surfaces and filling apertures with copper are also provided.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.

Abstract: Methods of depositing layers of copper that selectively incorporate certain impurities are provided. Such copper layers reduce stress-induced void formation in wide copper lines under vias.

Abstract: A counter electrode for use in an electrochemical cell suitable for analysis of an electroplating composition, the counter electrode comprising a conductor; a sheath disposed about the conductor; an electrolyte disposed within the sheath; and an optionally porous element on the sheath, the porous element providing signal communication between the electrolyte and an analyte.

Abstract: Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

Abstract: Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

Abstract: Compositions useful for electrodepositing a metal are provided. These compositions contain one or more metal salts, electrolyte, two or more brightener compounds and optionally one or more of leveler compounds and wetting agents. Also provided are methods of depositing a metal layer using these compositions.

Abstract: Copper electroplating baths containing one or more suppressor compounds capable of providing copper filled sub-micron sized apertures free of pits and voids are provided. Such copper electroplating baths are useful in the manufacture of electronic devices, such as printed wiring boards and integrated circuits.

Abstract: Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.

Abstract: A counter electrode for use in an electrochemical cell suitable for analysis of an electroplating composition, the counter electrode comprising a conductor; a sheath disposed about the conductor; an electrolyte disposed within the sheath; and an optionally porous element on the sheath, the porous element providing signal communication between the electrolyte and an analyte.

Abstract: Disclosed are electrolytes for copper electroplating that provide enhanced fill of small features with less overplate. Also disclosed are methods of plating substrates, such as electronic devices, using such electrolytes.

Abstract: Disclosed is a method of electroplating substrate such that small recessed features are completely filled with minimum thickness of the deposited metal over fields.

Abstract: Disclosed is a method of electroplating substrate such that small recessed features are completely filled with minimum thickness of the deposited metal over fields.

Abstract: Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.

Abstract: Disclosed are compositions useful for repair and electroplating of seed layers. Also disclosed are methods of repairing and electroplating such seed layers.