Abstract: A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.

Abstract: A data storage system includes a read/write head having a tip connected to a resistive path locally exerting heat at the tip when an electrical current is applied; and a data storage medium from which information is reproduced by scanning a surface of the medium with a tip positioned in contact therewith, the medium comprising: a substrate; and a polymer recording surface within which data bit values are determined by the topographical state at the bit location, characterized in that the polymer contains thermally reversible crosslinkages.

Abstract: Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

Abstract: A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed is a method that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.

Abstract: A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC?CH, C?CH2, C?C or a [S]n linkage, where n is a defined above.

Abstract: A method reading, writing, and erasing data includes bringing a thermal-mechanical probe into proximity with a layer of cross-linked polymeric material to induce a deformed region at a point in the film, thereby writing information; bringing a thermal-mechanical probe into proximity with the deformed region, thereby reading information; and bringing a thermal-mechanical probe into proximity with the deformed region, further deforming it in such a way to eliminate the deformed region, thereby erasing the information; and repeating the storing, reading, and erasing steps at points in the film.

Abstract: A data storage medium is disclosed from which information is reproduced by scanning a surface of the medium with a tip positioned in contact therewith. The medium includes a substrate and a polymer recording surface within which data bit values are determined by the topographical state at the bit location. The polymer contains thermally reversible crosslinkages.

Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

Abstract: A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.

Abstract: Methods and a structure. A first film of a first block copolymer is formed inside a trough integrally disposed on an energetically neutral surface layer of a substrate. Line-forming microdomains are assembled of the first block copolymer, and form first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. At least one microdomain is removed from the first film such that oriented structures remain in the trough oriented normal to the sidewalls and parallel to the surface layer. A second film of a second block copolymer is formed inside the trough. Line-forming microdomains are assembled of the second block copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. A second method and a structure are also provided.

Abstract: A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains.

Abstract: Precursors are provided for dielectric compositions that are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.

Abstract: Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organosilicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Abstract: A low-k organic dielectric material having stable nano-sized porous is provided as well as a method of fabricating the same. The porous low-k organic dielectric material is made from a composition of matter having a vitrification temperature (Tv-comp) which includes a b-staged thermosetting resin having a vitrification temperate (Tv-resin), a pore generating material, and a reactive additive. The reactive additive lowers Tv-comp below Tv-resin.

Abstract: A low-k organic dielectric material having stable nano-sized porous is provided as well as a method of fabricating the same. The porous low-k organic dielectric material is made from a composition of matter having a vitrification temperature (Tv-comp) which includes a b-staged thermosetting resin having a vitrification temperate (Tv-resin), a pore generating material, and a reactive additive. The reactive additive lowers Tv-comp below Tv-resin.

Abstract: A system is described that is configured to determine a plurality of air data parameters for an air vehicle. The system includes a mass air flow sensor, a pressure sensor, and a controller. The mass air flow sensor is mounted to sense an air flow caused by movement of the air vehicle. The pressure sensor is mounted to sense a static pressure at the air vehicle. The controller is configured to receive signals from the mass air flow sensor and the pressure sensor and determine an air velocity and a static pressure using the received signals.

Abstract: A method for characterizing pressure sensors to improve accuracy in an air data system is described where the sensors include at least one static pressure sensor and at least one total pressure sensor. The method includes characterizing the static pressure sensor and the total pressure sensor to determine a static pressure sensor error, Pse, and a total pressure sensor error, Pte, and performing a second ratiometric characterization to reference the total pressure sensor error, Pte, to the static pressure sensor error, Pse.

Abstract: Methods of forming dielectric films comprising Si, C, O and H atoms (SiCOH) or Si, C, N and H atoms (SiCHN) that have improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties are provided. Electronic structures including the above materials are also included herein.

Abstract: A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.

Abstract: An encapsulant fluid is provided comprising a mixture of a diene-containing compound and a dienophilic compound. At least one of the diene-containing and the dienophilic compounds is protected so that the compounds do not substantially react with each other at room temperature. The diene-containing and the dienophilic compounds undergo a reversible Diels-Alder polymerization reaction at a polymerization temperature above room temperature to form a solid debondable polymeric encapsulant. Also provided are methods for forming slider assemblies and methods for patterning a slider surface using the encapsulant.