Abstract: An apparatus and method for forming a self-limiting etchable layer on a workpiece. The apparatus comprises: a chamber adapted for holding a workpiece; a distribution plate within the chamber, wherein the distribution plate includes channels for introducing a first fluid (e.g., ammonia) and a second fluid (e.g., hydrogen fluoride) into the apparatus, such that the first and second fluids may be directed into the apparatus at the angles ?1 and ?2 with respect to an exposed surface of the distribution plate, wherein the channels for each type of fluid may be arranged respectively in alternating rings, and wherein each angle ?1 and ?2 are at least 45 degrees and less than 90 degrees, offset by ?2 and ?2 and ?1 and ?1 by analogy. The method for forming the etchable layer on the workpiece comprises introducing a first fluid and a second fluid into the chamber through the channels.

Abstract: An apparatus and method for forming a self-limiting etchable layer on a workpiece. The apparatus comprises: a chamber adapted for holding a workpiece; a distribution plate within the chamber, wherein the distribution plate includes channels for introducing a first fluid (e.g., ammonia) and a second fluid (e.g., hydrogen fluoride) into the apparatus, such that the first and second fluids may be directed into the apparatus at the angles Î,1 and Î,2 with respect to an exposed surface of the distribution plate, wherein the channels for each type of fluid may be arranged respectively in alternating rings; and wherein each angle Î,1 and Î,2 are at least 45 degrees and less than 90 degrees, offset by α2 and Î22 and α1 and Î21 by analogy. The method for forming the etchable layer on the workpiece comprises introducing a first fluid and a second fluid into the chamber through the channels.