Abstract: A method for fabricating fused quartz crucibles is disclosed. Quartz sand is placed in a rotating fusion pot and takes on the shape of a bowl as a result of centrifugal forces. The quartz sand is heated to a temperature sufficient to melt and fuse the quartz sand together. A fast diffusing gas such as helium or hydrogen is passed through the quartz sand to displace residual gases present in voids defined by the quartz sand. The fast diffusing gas remains present in the voids. The resulting crucible has reduced bubble growth during use as well as reduced bubble count and bubble size at fusion.

Abstract: A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation and bottom wall each have an inner and an outer surface. A first devitrification promoter is deposited on the inner surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a first layer of substantially devitrified silica forms on the inner surface which is capable of promoting substantially uniform dissolution of the inner surface and reducing the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material.

Abstract: A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process.

Abstract: A composite fused quartz material is disclosed for processing semiconductor grade silicon material in an improved manner. The modified vitreous material includes a disperse phase of fine size silicon metal particles which are distributed in preselected regions of the fused quartz matrix as a means of exercising temperature control in the various semiconductor processing operations using these fused quartz parts. Such utilization of the modified vitreous material in single crystal silicon rod growth and production of semiconductor grade silicon by diffusion doping is described. A method to produce the modified vitreous material is also disclosed.

Abstract: A composite fused quartz material is disclosed for processing semiconductor grade silicon material in an improved manner. The modified vitreous material includes a disperse phase of fine size silicon metal particles which are distributed in preselected regions of the fused quartz matrix as a means of exercising temperature control in the various semiconductor processing operations using these fused quartz parts. Such utilization of the modified vitreous material in single crystal silicon rod growth and production of semiconductor grade silicon by diffusion doping is described. A method to produce the modified vitreous material is also disclosed.

Abstract: Copper staining of a borosilicate glass article is described which utilizes a single heating step to produce red coloration in the stained glass. The method utilizes a particular liquid slurry to coat the surface of the glass article being treated which generates copper halide vapors during a single heating step in a controlled atmosphere to produce the desired final red color. Atmosphere control is exercised with non-reducing atmosphere conditions being maintained until the alkali metal ions in the glass surface have been replaced with copper ions and which is followed by conversion to reducing atmosphere conditions to convert the substituted copper ions to the metallic state.