Patents by Inventor Robert D. Tas
Robert D. Tas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11668601Abstract: An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.Type: GrantFiled: February 8, 2021Date of Patent: June 6, 2023Assignee: KLA CorporationInventors: Robert D. Tas, Earl Jensen
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Publication number: 20210262859Abstract: An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.Type: ApplicationFiled: February 8, 2021Publication date: August 26, 2021Applicant: KLA CorporationInventors: Robert D. Tas, Earl Jensen
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TEMPERATURE-CONTROLLED CHALCOGEN VAPOR DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM CIGS DEPOSITION
Publication number: 20180037981Abstract: A deposition system and method for depositing a uniform film of a chalcogen-containing compound semiconductor are provided. The deposition system includes a vacuum enclosure connected to a vacuum pump, a sputtering system comprising at least one sputtering target located in the vacuum enclosure, a chalcogen-containing gas source, and a gas distribution manifold having a supply side and a distribution side. The distribution side has a plurality of opening regions having independent temperature control and the supply side is connected to the chalcogen-containing gas source. A method of reactive sputter depositing a chalcogen-containing compound semiconductor material includes sputtering at least one metal component of the chalcogen-containing compound semiconductor material onto the substrate, and providing a higher chalcogen flux to ends of the substrate than to a middle of the substrate to form the chalcogen-containing compound semiconductor material.Type: ApplicationFiled: August 3, 2016Publication date: February 8, 2018Inventors: Robert D. Tas, Heinrich Von Bunau, Robert Martinson -
Patent number: 8622017Abstract: An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.Type: GrantFiled: May 19, 2011Date of Patent: January 7, 2014Assignee: Lam Research CorporationInventors: Igor Ivanov, Robert D. Tas, Shashank Ravindra Kulkarni, Ron Rulkens
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Publication number: 20110214608Abstract: An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.Type: ApplicationFiled: May 19, 2011Publication date: September 8, 2011Inventors: Igor Ivanov, Robert D. Tas, Shashank Ravindra Kulkarni, Ron Rulkens
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Patent number: 7972652Abstract: An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.Type: GrantFiled: October 14, 2006Date of Patent: July 5, 2011Assignee: Lam Research CorporationInventors: Igor Ivanov, Robert D. Tas, Shashank Ravindra Kulkarni, Ron Rulkens
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Publication number: 20110135824Abstract: An electroless deposition method includes providing a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million, and replenishing deionized water in the deposition solution.Type: ApplicationFiled: February 16, 2011Publication date: June 9, 2011Inventors: Ron Rulkens, Robert D. Tas, Shashank Ravindra Kulkarni, Artur Kolics, Nancy E. Gilbert
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Patent number: 7913644Abstract: An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.Type: GrantFiled: September 30, 2006Date of Patent: March 29, 2011Assignee: Lam Research CorporationInventors: Ron Rulkens, Robert D. Tas, Shashank Ravindra Kulkarni, Artur Kolics, Nancy E. Gilbert
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Patent number: 7845308Abstract: Systems having an in-line microwave heater to heat fluids for processing a substrate are provided. An embodiment of a system includes a microelectronic processing chamber, a reservoir for storing a fluid used to process wafers within the chamber, a supply line for transporting the fluid to the chamber, and a microwave heater arranged along the supply line. The system includes processor executable program instructions for operating the microwave heater at parameters configured to heat fluid within the supply line to a temperature greater than a fluid temperature within the reservoir, such as approximately 20° C. greater than the reservoir fluid temperature. It is noted that the inclusion of an in-line microwave heater is not limited to microelectronic fabrication systems, but may be used for any system in which heated fluids are used for processing a substrate, such as but not limited to electroplating or electroless plating systems.Type: GrantFiled: September 28, 2006Date of Patent: December 7, 2010Assignee: Lam Research CorporationInventors: Jason Corneille, Nancy E. Gilbert, Robert D. Tas, Steven Flanders, Timothy J. Franklin, Jason R. Wright, Stephen C. Jones, Joe Laia
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Publication number: 20090288593Abstract: An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.Type: ApplicationFiled: September 30, 2006Publication date: November 26, 2009Applicant: BLUE 29, LLCInventors: Ron Rulkens, Robert D. Tas, Shashank Ravindra Kulkarni, Artur Kolics, Nancy E. Gilbert
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Publication number: 20090253262Abstract: An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.Type: ApplicationFiled: October 14, 2006Publication date: October 8, 2009Applicant: Blue29, LLCInventors: Igor Ivanov, Robert D. Tas, Shashank Ravindra Kulkarni, Ron Rulkens
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Patent number: 6846391Abstract: A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.Type: GrantFiled: December 21, 2001Date of Patent: January 25, 2005Assignee: Novellus SystemsInventors: George D. Papasouliotis, Robert D. Tas, Patrick A. Van Cleemput, Bart van Schravendijk
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Patent number: 6794290Abstract: A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and hydrogen etch steps. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses a hydrogen-based plasma to chemically etch the deposited material to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.Type: GrantFiled: December 3, 2001Date of Patent: September 21, 2004Assignee: Novellus Systems, Inc.Inventors: George D. Papasouliotis, Robert D. Tas