Abstract: An anti-polish ring for an internal combustion engine is provided. The anti-polish ring includes an axially extending ring portion that is configured to scrape a top portion of a piston in a cylinder liner. The anti-polish ring is configured to accommodate passage of an intake or exhaust valve thereby. The anti-polish ring may include an alignment feature so that the anti-polish ring is inserted in a predetermined orientation in the cylinder. The anti-polish ring may include a heat shield and/or a seating member.

Abstract: A method of forming a fuel cell pile including a porous anode and a porous cathode separated by a dense electrolyte is disclosed. A solid oxide fuel cell incorporating the fuel cell pile is formed on a substrate by a series of lithography, etch and deposition steps that create a solid oxide fuel cell. Individual cells may be interconnected by micro-channels and metal interconnects to form fuel cell stacks. The structure of the cell and a method of manufacturing are disclosed.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50 g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount.

Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Abstract: Vessel and method for the production and delivery of a precursor-containing fluid stream comprising the gaseous phase of a precursor material are disclosed herein. In one aspect, there is provided an vessel comprising: an interior volume wherein the interior volume is segmented into an upper volume and a lower volume wherein the upper volume and the lower volume are in fluid communication; a lid comprising a fluid inlet, a fluid outlet, an optional fill port, and an internal recess wherein at least a portion of the upper volume resides within the internal recess; a sidewall interposed between the lid and a base; and at least one protrusion that extends into the lower volume wherein the precursor is in contact with the at least one protrusion and wherein at least one protrusion extends from at least one selected from the lid, the sidewall, the base, and combinations thereof.