Abstract: Various aspects and embodiments are directed to a streamlined computer device and a graphical user interface that organizes interface elements into views of computer content for presentation to a user. Various views of digital media content permits users to easily and efficiently access various digital media content. Different views are used to provide an interface that is responsive to configurations of the device and responsive to activity being performed by the user. Aspects include permitting the user to maintain and manage digital media content libraries. According to some embodiments, the libraries comprise user digital media content and references digital media content. Functionality provided to a user can be tailored to the type of content displayed, accessed and/or managed. According to various aspects, methods and systems are provided for accessing and managing digital media libraries on a streamlined computing device with a plurality selectable I/O profiles.

Abstract: Light-emitting diode (LED) packages and more particularly encapsulation arrangements in LED packages that provide reduced internal stresses are disclosed. LED packages may include housings that form a recess with one or more LED chips provided within the recess. Encapsulation arrangements include multiple encapsulation layers where a first encapsulation layer covers portions of a recess floor and sidewalls of the one or more LED chips, and a second encapsulation layer that covers the first encapsulation layer. In this manner, the first encapsulation layer is configured to buffer internal encapsulation stresses during operation that could lead to delamination of the LED chips.

Abstract: Light-emitting diode (LED) packages, and more particularly arrangements of light-altering coatings in LED packages are disclosed. Exemplary LED packages may include lead frame structures that are at least partially encased by a housing. Arrangements of light-altering coatings may be provided that cover one or more portions of lead frame structures exposed within LED package recesses. By providing light-altering coatings that cover lead frame structures within package recesses, negative impacts from potential lead frame discoloration due to environmental exposure may be reduced. Additionally, such light-altering coatings may be configured to reflect light emissions from LED chips before reaching portions of lead frame structures. Light-altering coating arrangements are disclosed where light-altering coatings are arranged in contact with LED chips or, alternatively, in a spaced relationship with LED chips.

Abstract: Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layers, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: A solid state light emitting device includes a solid state light emitter and a lumiphoric material that are selected for use with one another to provide light emissions with improved (i.e., reduced) thermal droop A solid state emitter having a short peak emission wavelength (e.g., in a visible range at or below 440 nm) seemingly less than optimal at room temperature for use with a particular lumiphor can trigger more efficient stimulation of lumiphor emissions at high temperatures. Enhanced epitaxial structures also inhibit decrease of radiant flux by LEDs at elevated temperatures.