Abstract: The embodiments described herein provide methods for executing a command to write data from a source location to a destination location in a memory device. In one embodiment, a memory device receives, from a host device, a command to write data from a source location to a destination location in the memory device. The memory device executes the command by changing the memory device's logical-to-physical address map without reading the data from the source location and writing the data to the destination location and without a need of further involvement of the host device after the host device sends the command to the memory device.

Abstract: An electronic memory module according to the invention provides non-volatile memory that can be used in place of a DRAM module without battery backup. An embodiment of the invention includes an embedded microprocessor with microcode that translates the FB-DIMM address and control signals from the system into appropriate address and control signals for NAND flash memory. Wear-leveling, bad block management, garbage collection are preferably implemented by microcode executed by the microprocessor. The microprocessor, additional logic, and embedded memory provides the functions of a flash memory controller. The microprocessor memory preferably contains address mapping tables, free page queue, and garbage collection information.

Abstract: The embodiments described herein provide methods for executing a command to write data from a source location to a destination location in a memory device. In one embodiment, a memory device receives, from a host device, a command to write data from a source location to a destination location in the memory device. The memory device executes the command by changing the memory device's logical-to-physical address map without reading the data from the source location and writing the data to the destination location and without a need of further involvement of the host device after the host device sends the command to the memory device.

Abstract: Methods for writing data from a source location to a destination location in a memory device are provided. In one embodiment, a memory device receives a command from a host device, wherein the command specifies a logical address of a source location in the memory and a logical address of a destination location in the memory. The memory device translates the logical addresses of the source and destination locations to physical addresses of the memory, reads data from the source location, and writes the data to the destination location. In this embodiment, the data is read from the source location and written to the destination location without a need of further involvement of the host device after the host device sends the command to the memory device. Other embodiments are provided.

Abstract: An electronic memory module according to the invention provides non-volatile memory that can be used in place of a DRAM module without battery backup. An embodiment of the invention includes an embedded microprocessor with microcode that translates the FB-DIMM address and control signals from the system into appropriate address and control signals for NAND flash memory. Wear-leveling, bad block management, garbage collection are preferably implemented by microcode executed by the microprocessor. The microprocessor, additional logic, and embedded memory provides the functions of a flash memory controller. The microprocessor memory preferably contains address mapping tables, free page queue, and garbage collection information.