Abstract: A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial.

Abstract: A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial.

Abstract: The present invention relates to an improved structure of the “showerhead used to introduce gaseous source material into a vapor deposition reactor such as a metal-organic chemical vapor deposition (MOCVD) reactor. The showerhead includes inlet seal assemblies that connect the inlet lines to the showerhead through the use of opposing planar seal faces so as to simplify the process of connecting and disconnecting the inlet lines to the showerhead. In addition, the showerhead includes a gas dispersion assembly on the inner face of the showerhead that optimizes the flow of gaseous material into the reaction chamber. The gas dispersion assembly includes a plurality of webbed disks that define discrete dispersion chambers. The webbed disks include integrally-formed flow diverters that direct the flow of gas into the dispersion chambers so as to create a controlled, uniform flow of material into the reaction chamber.

Abstract: The present invention relates to an improved structure of the “showerhead used to introduce gaseous source material into a vapor deposition reactor such as a metal-organic chemical vapor deposition (MOCVD) reactor. The showerhead includes inlet seal assemblies that connect the inlet lines to the showerhead through the use of opposing planar seal faces so as to simplify the process of connecting and disconnecting the inlet lines to the showerhead. In addition, the showerhead includes a gas dispersion assembly on the inner face of the showerhead that optimizes the flow of gaseous material into the reaction chamber. The gas dispersion assembly includes a plurality of webbed disks that define discrete dispersion chambers. The webbed disks include integrally-formed flow diverters that direct the flow of gas into the dispersion chambers so as to create a controlled, uniform flow of material into the reaction chamber.