Abstract: The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1-x-yInyN, where 0?x+y?1, 0?x?1 and 0?y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer.

Abstract: An apparatus includes an autoclave for preparing a supercritical solvent, a convection controller for establishing a convection flow, a dissolution zone where a feedstock is located above the convection controller and a crystallization zone where a seed is located below the convection controller are formed. A convection flow rate of the supercritical solution between the dissolution zone and the crystallization zone is determined by the degree of opening of the convection controller and the temperature difference between the dissolution zone and the crystallization zone. Accordingly, the supercritical solution, in which the nitride has a negative temperature coefficient of solubility, is supplied from the dissolution zone to the crystallization zone in which a seed is located through the convection controller so that nitride crystal is selectively grown on the seed by maintaining supersaturation of the supercritical solution with respect to the seed at a raised temperature.

Abstract: An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0?×<1 in an environment of supercritical ammonia-containing solution has been now proposed. According to the invention growth rate and quality of the product obtained can be controlled by suitable selection of mineralizer, so as to ensure presence of ions of Group I element (IUPAC 1989), preferably sodium in combination with other components selected from the group consisting of Group I elements (IUPAC 1989), ions of Group II elements (IUPAC 1989), one or more substances containing oxygen-free species causing some weakening of the ammono-basic nature of the supereritical solvent, optionally in combination with Group II elements (JUPAC 1989), preferably calcium or magnesium.

Abstract: The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1?x?yINyN, where 0?x+y?1, 0?x?1 and 0?y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention.

Abstract: The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 ?m thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0-?m thick and its surface dislocation density is less than 106/cm2.

Abstract: There is provided an apparatus comprising an autoclave 1 for preparing a supercritical solvent equipped with a convection control means 2 for establishing a convection flow, wherein the dissolution zone 13 where a feedstock 16 is located above the convection control means 2 and the crystallization zone where a seed 17 is located below the convection control means are formed. A convection flow rate of the supercritical solution between the dissolution zone 13 and the crystallization zone 14 is determined by the degree of opening of the convection control means 2 and the temperature difference between the dissolution zone 13 and crystallization zone 14.

Abstract: The present invention provides a process for forming a bulk monocrystalline gallium nitride by using supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ion or ions of alkali metals in an autoclave; and dissolving a monocrystalline gallium nitride prepared by flux methods as a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately recrystallizing gallium nitride on the face of a seed.

Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.

Abstract: An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0?x<1 in an environment of supercritical ammonia-containing solution has been now proposed. According to the invention growth rate and quality of the product obtained can be controlled by suitable selection of mineralizer, so as to ensure presence of ions of Group I element (IUPAC 1989), preferably sodium in combination with other components selected from the group consisting of Group I elements (IUPAC 1989), ions of Group II elements (IUPAC 1989), one or more substances containing oxygen-free species causing some weakening of the ammono-basic nature of the supercritical solvent, optionally in combination with Group II elements (IUPAC 1989), preferably calcium or magnesium. The improved bulk mono-crystals obtained thereby are intended mainly for use in the field of opto-electronics.

Abstract: The object of this invention is to provide a high-output type nitride semiconductor laser device comprising a pair of end faces of a resonator. The nitride semiconductor laser device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and a resonator, provided with an active layer comprising nitride semiconductor containing In therebetween, wherein at least light emitting end face of the resonator is covered with an end face film of single crystal AlxGa1-xN (0?x?1) formed at a low temperature not causing damage to the active layer comprising nitride semiconductor containing In.

Abstract: The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5×105/cm2 or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

Abstract: A light emitting device having a phosphor substrate, which comprises nitride containing at least one element selected from Group XIII (IUPAC 1989) having a general formula XN, wherein X is at least one element selected from B, Al, Ga and In, a general formula XN:Y, wherein X is at least one element selected from B, Al, Ga and In, and Y is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, or a general formula XN:Y,Z, wherein X is at least one element selected from B, Al, Ga and In, Y is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, and Z is at least one element selected from C, Si, Ge, Sn, Pb, O and S. The phosphor substrate is prepared by crystallization from supercritical ammonia-containing solution and the light emitting device is formed by a vapor phase growth on the phosphor substrate so as to obtain a light emitting device which has a wavelength distribution emitting a white light etc. and a good yield.

Abstract: The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

Abstract: A process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed.

Abstract: The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.

Abstract: The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1?x?yINyN, where 0?x+y?1, 0?x?1 and 0?y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer.

Abstract: The present invention provides a process for forming a bulk monocrystalline aluminum nitride by using a supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ions of an alkali metal in an autoclave; and dissolving a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately crystallizing aluminum nitride on the face of a crystallization seed. This process is carried out in the autoclave (1) which is provided with a convection-controller (2) arranged therein and which is to produce a supercritical solvent. The autoclave is set in a furnace unit (4) equipped with a heater (5) and/or a cooler (6).

Abstract: The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 &mgr;m thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0 &mgr;m thick and its surface dislocation density is less than 106/cm2.

Abstract: The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of alkali metals in an autoclave, dissolving a gallium-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the feedstock is dissolved, and crystallizing gallium-containing nitride on the face of a seed which contains no element of oxygen and has a lattice constant of 2.8 to 3.6 with respect to ao-axis from the supercritical solution, under a condition of a higher temperature and/or a lower pressure than the temperature and/or the pressure where the gallium-containing feedstock is dissolved in the supercritical solvent. Therefore nitride gallium system compound semiconductor device can be formed on a conductive substrate.

Abstract: The object of this invention is to provide a high-output type nitride light emitting device.