Abstract: A disclosed method for evaluating placement context sensitivity in the design of an integrated circuit includes accessing a standard cell library comprising a database of standard cells and determining generating boundary data for each of the standard cells. The boundary data for a standard cell indicates the layout of features located within boundary regions of the standard cell. The method includes merging or consolidating boundary data for any two standard cells if their boundary data is the same to determine a canonical or minimal set of boundary regions. The disclosed method further includes enumerating and evaluating all combinations of pairs of the canonical boundary regions and, responsive to identifying of a proximity-based sensitivity or exception, modifying, notating, or otherwise remediating the applicable one or more standard cells that correspond to the boundary region combination that raised the exception.

Abstract: A disclosed method for evaluating placement context sensitivity in the design of an integrated circuit includes accessing a standard cell library comprising a database of standard cells and determining generating boundary data for each of the standard cells. The boundary data for a standard cell indicates the layout of features located within boundary regions of the standard cell. The method includes merging or consolidating boundary data for any two standard cells if their boundary data is the same to determine a canonical or minimal set of boundary regions. The disclosed method further includes enumerating and evaluating all combinations of pairs of the canonical boundary regions and, responsive to identifying of a proximity-based sensitivity or exception, modifying, notating, or otherwise remediating the applicable one or more standard cells that correspond to the boundary region combination that raised the exception.

Abstract: A method is provided for making an integrated circuit. Cell representing a layout of a set of features, is divided into at least a first region and a second region. Optical Proximity Correction is carried out on at least the first region of cell. One or more instances of cell are located to define IC prior to carrying out final OPC optimisation on the second regions of each cell in the defined IC.

Abstract: A method for improving manufacturability of a design includes performing space or enclosure checks on multiple interacting layers of a layout design and then using the resulting space or enclosure data to move predetermined feature edges in an altered design database to decrease the risk of features widths, feature spaces or feature enclosures being patterned smaller than designed. In some embodiments, the upsized features are larger in the wafer circuit pattern than are drawn in a designed database. The method for improving manufacturability of a design, in some embodiments, is stored on a computer readable storage medium.

Abstract: A method of designing and forming a reticle (404), as well as the manufacture of a semiconductor substrate (410) using the reticle, includes defining a first edge of a reticle layout file. The first edge corresponds to a reference feature (12,14). The method further includes using the reference feature to insert a subresolution assist feature (62,64) into the reticle layout file. The subresolution assist feature is at an angle (&thgr;) with respect to a line (82,84) containing the first edge, wherein the angle differs from 90 degrees. In one embodiment, the subresolution assist features can be manually or automatically inserted into the layout file after the locations of the assist features have been determined. The subresolution assist features are not patterned on the substrate, but assist in forming resist features of uniform dimension.

Abstract: A method of generating a design of a reticle for a photolithography process. The reticle may include phase shift features, binary features, and mixed features. The method includes generating a reticle design from a pattern layout and then optimizing the reticle design. In some examples, generating the reticle design includes binning the features of the layout based on feature width. Examples of optimization operations include an over/under operation, an under/over operation, a feature segment expansion operation, a feature edge portion conversation from a binary portion to a phase shift portion, a corner binary segment expansion, a discontinuity removal operation, and a feature dimension change operation that includes a determination of a Mask Error Factor (MEF).

Abstract: Selective placement of polishing dummy feature patterns, rather than indiscriminate placement of polishing dummy feature patterns, is used. Both low frequency (hundreds of microns and larger) and high frequency (10 microns and less) of topography changes are examined. The polishing dummy feature patterns can be specifically tailored to a semiconductor device and polishing conditions used in forming the semiconductor device. When designing an integrated circuit, polishing effects for the active features can be predicted. After polishing dummy feature pattern(s) are placed into the layout, the planarity can be examined on a local level (a portion but not all of the device) and a more global level (all of the device, devices corresponding to a reticle field, or even an entire wafer).

Abstract: Selective placement of polishing dummy feature patterns, rather than indiscriminate placement of polishing dummy feature patterns, is used. Both low frequency (hundreds of microns and larger) and high frequency (10 microns and less) of topography changes are examined. The polishing dummy feature patterns can be specifically tailored to a semiconductor device and polishing conditions used in forming the semiconductor device. When designing an integrated circuit, polishing effects for the active features can be predicted. After polishing dummy feature pattern(s) are placed into the layout, the planarity can be examined on a local level (a portion but not all of the device) and a more global level (all of the device, devices corresponding to a reticle field, or even an entire wafer).