Abstract: Electromagnetic shielding for an integrated circuit packaged device. The method includes forming shielding structures by forming openings in an encapsulated structure. The openings are filled with conductive material that surrounds at least one die. The encapsulated structure may include a plurality of integrated circuit die. A layered redistribution structure is formed on one side of the encapsulated structure.

Abstract: A set of distal femoral knee prostheses which are designed to be more narrow in medial/lateral dimensions with increasing anterior/posterior size than existing prostheses to more closely correspond to the physical anatomy of female patients. The prostheses are designed to have a substantially trapezoidal shape or profile when viewed distally which features a more pronounced narrowing of the medial/lateral dimensions beginning at the posterior end of the prostheses and progressing anteriorly to the anterior end of the prostheses. Additionally, the prostheses each include a reduced profile patellar sulcus and reduced profile anterior condyles to more closely conform to the anatomy of a resected femur, and also include sulcus tracking optimized to conform to female anatomy.

Abstract: A method includes forming a first transistor having a first gate dielectric thickness and a first source/drain extension depth, a second transistor having a second gate dielectric thickness and the first source/drain extension depth, and a third transistor having the second gate dielectric thickness and a second source/drain extension depth. The second source/drain extension depth is greater than the first source/drain extension depth. The second gate dielectric thickness is greater than the first gate dielectric thickness. The first transistor is used in a logic circuit. The third transistor is used in an I/O circuit. The second transistor is made without extra processing steps and is better than either the first or third transistor for coupling a power supply terminal to the logic circuit in a power-up mode and decoupling the power supply terminal from the logic circuit in a power-down mode.

Abstract: Electromagnetic shielding for an integrated circuit packaged device. The method includes forming shielding structures by forming openings in an encapsulated structure. The openings are filled with conductive material that surrounds at least one die. The encapsulated structure may include a plurality of integrated circuit die. A layered redistribution structure is formed on one side of the encapsulated structure.

Abstract: Electromagnetic shielding for an integrated circuit packaged device. The method includes forming shielding structures by forming openings in an encapsulated structure. The openings are filled with conductive material that surrounds at least one die. The encapsulated structure may include a plurality of integrated circuit die. A layered redistribution structure is formed on one side of the encapsulated structure.

Abstract: A method includes forming a first transistor having a first gate dielectric thickness and a first source/drain extension depth, a second transistor having a second gate dielectric thickness and the first source/drain extension depth, and a third transistor having the second gate dielectric thickness and a second source/drain extension depth. The second source/drain extension depth is greater than the first source/drain extension depth. The second gate dielectric thickness is greater than the first gate dielectric thickness. The first transistor is used in a logic circuit. The third transistor is used in an I/O circuit. The second transistor is made without extra processing steps and is better than either the first or third transistor for coupling a power supply terminal to the logic circuit in a power-up mode and decoupling the power supply terminal from the logic circuit in a power-down mode.

Abstract: A method determines a body bias for a memory cell. A supply voltage is applied to the memory cell and a bit line is precharged to a voltage lower than the supply voltage. A programmable bias voltage circuit provides a bias voltage to the memory cell in response to values on its input. Initial test values for the input are used. The memory cell is tested to determine a pass or a fail condition of the memory cell. The initial values are retained as the input values if the memory cell passes. If the memory cell fails, the memory cell is tested at changed values for the input. If the changed input values result in the memory cell being in a pass condition, the programmable bias voltage circuit is configured, in non-volatile fashion, to have the changed input values.

Abstract: Electromagnetic shielding for an integrated circuit packaged device. The method includes forming shielding structures by forming openings in an encapsulated structure. The openings are filled with conductive material that surrounds at least one die. The encapsulated structure may include a plurality of integrated circuit die. A layered redistribution structure is formed on one side of the encapsulated structure.

Abstract: A method determines a body bias for a memory cell. A supply voltage is applied to the memory cell and a bit line is precharged to a voltage lower than the supply voltage. A programmable bias voltage circuit provides a bias voltage to the memory cell in response to values on its input. Initial test values for the input are used. The memory cell is tested to determine a pass or a fail condition of the memory cell. The initial values are retained as the input values if the memory cell passes. If the memory cell fails, the memory cell is tested at changed values for the input. If the changed input values result in the memory cell being in a pass condition, the programmable bias voltage circuit is configured, in non-volatile fashion, to have the changed input values.

Abstract: When saturated with boron trifluoride, certain polyhydric alcohols form adducts which catalyze hydrocarbon alkyl transfer reactions for which boron trifluoride is catalytic. The adduct is recovered from the reaction mixture and recycled, greatly reducing boron and fluoride values in the product and in any effluent. Examples include propylation of toluene in the presence of a recycled adduct of boron trifluoride with mannitol or sorbitol, and the oligomerization of decene by a recycled adduct of boron trifluoride with mannitol or butanediol. Some of the catalysts become viscous on cooling and are thus more easily separated from the reaction products which remain in a separate liquid phase.

Abstract: When saturated with boron trifluoride, certain polyhydric alcohols form adducts which catalyze reactions for which boron trifluoride is catalytic. The adduct is recovered from the reaction mixture and recycled, greatly reducing boron and fluoride values in the product and in any effluent. Examples include propylation of toluene in the presence of a recycled adduct of boron trifluoride with mannitol or sorbitol.