Abstract: This disclosure is a integrated circuit reference diode having improved manufacturability and electrical characteristics. The improved diode results from a structure and process which both reduces the subsurface breakdown and enhances the surface breakdown.

Abstract: A pressure sensing device including a single crystal of silicon configured to have a diaphram portion, a frame portion and associated circuitry formed on the crystal is described. Piezo-resistive elements on the boundary of the frame and the diaphram portions of the crystal respond to changes in pressure. The piezo-resistive elements, associated elements, and connecting conducting paths are formed by thin film and/or doping techniques to provide a monolithically integrated circuit. The elements are passive and require only application of input voltages and detection of output signals to provide an operative component. Trimmable resistors are provided for compensation and resistive adjustment, and at least one resistive element provides temperature compensation.

Abstract: A pressure sensing device including a single crystal of silicon configured to have a diaphram portion, a frame portion and associated circuitry formed on the crystal is described. Piezo-resistive elements on the boundary of the frame and the diaphram portions of the crystal responds to changes in pressure. The piezo-resistive elements, associated elements, and connecting conducting paths are formed by thin film and/or doping techniques to provide a monolithically integrated circuit. The elements are passive and require only application of input voltages and detection of output signals to provide an operative component. Trimmable resistors are provided for compensation and resistive adjustment, and at least one resistive element provides temperature compensation.

Abstract: A method for processing a semiconductor wafer to reduce electrical noise, to reduce the surface component of junction leakage current, to increase junction reverse breakdown voltage, and to increase field inversion voltage. Subsequent to last high temperature processing to which the semiconductor wafer is exposed in course of its manufacture, the semiconductor wafer is subjected to an annealing cycle in an inert ambient at a temperature in the range of 600 to 950 degrees Centigrade. At this point the semiconductor wafer has a field oxide thereon produced by prior processing operations. The annealing cycle stabilizes the semiconductor device by allowing an oxide-semiconductor interface region of the wafer to attain a minimum energy configuration, thereby reducing the surface-state charge density. The semiconductor wafer is then exposed to an oxidizing ambient for a short time to increase the oxide charge.