Abstract: Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.

Abstract: A thin film strain gage structure (10, 110) for measuring the strain of an inflectible element (12, 112) wherein the gage is formed on a surface (15, 115) of the element and includes a sensing resistance (16, 116) and an adjusting resistance portion (21, 121). Connecting taps are formed in relationship to the resistors to permit adjustment of the adjusting resistor values by suitable connection to selected ones of the taps. The adjusting resistance is preferably disposed adjacent the sensing resistance so as to be subject to similar ambient conditions. The sensing resistance may be provided in the form of a Wheatstone bridge circuit with the adjusting resistors connected in series with two legs of the bridge. Adjustment of the adjusting resistance may be effected selectively by shorting out portions thereof or by suitably connecting to different portions thereof.

Abstract: A thin film strain gage structure (10,110) for measuring the strain of an inflectible element (12,112) wherein the gage is formed on a surface (15,115) of the element and includes a sensing resistance (16,116) and an adjusting resistance portion (21,121). Connecting taps are formed in relationship to the resistors to permit adjustment of the adjusting resistor values by suitable connection to selected ones of the taps. The adjusting resistance is preferably disposed adjacent the sensing resistance so as to be subject to similar ambient conditions. The sensing resistance may be provided in the form of a Wheatstone bridge circuit with the adjusting resistors connected in series with two legs of the bridge. Adjustment of the adjusting resistance may be effected selectively by shorting out portions thereof or by suitably connecting to different portions thereof.

Abstract: A method and apparatus for detecting the end point of a plasma etching process comprising the use of an optical technique in which light is beamed on the layer to be etched and the resulting beam that is reflected and refracted is detected. Sharply different values of light intensity can be detected when the desired layer is etched and the next layer receives the light beam. A laser is preferably used to obtain an intense and substantially uniform frequency light source.