Abstract: The present neutron sensing device includes a first substantially planar array of flash memory cells, a second substantially planar array of flash memory cells having an edge adjacent an edge of the first substantially planar array of flash memory cells, and a third substantially planar array of flash memory cells having a first edge adjacent an edge adjacent an edge of the first substantially planar array of flash memory cells and a second edge adjacent an edge of the second substantially planar array of flash memory cells.

Abstract: A semiconductor structure includes a substrate and a semiconductor devices secured to the substrate. A stabilizing member is secured to the semiconductor device, and has a coefficient of thermal expansion which is substantially the same as the coefficient of thermal expansion of the substrate. The bending stiffness of the substrate is substantially the same as the bending stiffness of the stabilizing member, wherein: bending stiffness=Et3, with E=Young's modulus, and t=thickness. In another embodiment, a stabilizing member is secured to the substrate, and has a coefficient of thermal expansion which is substantially the same as the coefficient of thermal expansion of the die. The bending stiffness of the die is substantially the same as the bending stiffness of the stabilizing member, with bending stiffness defined as above.