Abstract: A variable phase shifter based on the slow-wave effect for operation in the millimeter wave region, comprising a GaAs substrate for mechanical support; an n.sup.+ doped semiconductor layer disposed on the GaAs substrate for operation as a first ground plane; an n doped semiconductor layer disposed on the n.sup.+ semiconductor layer with a thickness to permit only one mode at millimeter wave frequencies to propagate, while suppressing higher order millimeter wave modes; and a Schottky metal microstrip with first and second ends disposed on top of the n doped semiconductor layer. Means are provided in the form of ohmic contacts for electrically connecting the n.sup.+ semiconductor layer to ground electrical potential. These ohmic contacts are disposed on top of the n doped layer, but are provided with a very large surface area contact to the n doped layer in order to significantly reduce the resistance between the ohmic contact and to the n.sup.+ semiconductor layer.