Abstract: A device for producing single crystals of silicon carbide has a furnace and a chamber with a crucible and a seed crystal, the chamber being accommodated in the furnace, wherein a base material containing silicon carbide is arranged in the crucible, wherein the base material contains a mixture of silicon carbide powder and silicon carbide lumps.

Abstract: A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

Abstract: A method for controlling an automatic transmission of a vehicle. The method includes operating the transmission in an automatic mode whereby gear shifting of the transmission is performed automatically based on a speed of the vehicle; receiving a shifting request from a user-operated gear shifter to either: (i) upshift the transmission from a current gear to a higher gear; or (ii) downshift the transmission from the current gear to a lower gear. In response to the shifting request, the method continues with operating the transmission in a semi-automatic mode whereby gear shifting is based on user-generated shifting requests; performing the upshift or the downshift according to the shifting request; monitoring a speed of an engine of the vehicle; and in response to the speed being at a lower speed limit or an upper speed limit, returning operation of the transmission to the automatic mode.

Abstract: A method for controlling a powertrain of a vehicle, the powertrain a dual-clutch transmission including a first clutch and a second clutch selectively actuated to transmit motion from the engine to a first shaft and a second shaft respectively. The method includes producing a first shift request for shifting from an initial gear to a different gear; in response to the first shift request, executing a first shift sequence to shift from the initial gear to the different gear; during execution of the first shift sequence, producing a second shift request for shifting from the different gear to the initial gear; in response to the second shift request: interrupting the first shift sequence prior to the first shift sequence having finished; and executing a second shift sequence to reverse the first shift sequence such that the transmission engages the initial gear for driving on the first shaft.

Abstract: A device for tempering an object includes a chamber for receiving the object, wherein the chamber is surrounded by a chamber casing, a base element and a cover element, a heating element, a rotor for circulating a first gas, wherein the rotor is arranged in the chamber, and a rotor drive with which the rotor is made to rotate. The heating element is formed by the rotor with the rotor drive.

Abstract: A measuring system for determining the temperature of a heat treatment material in a continuous furnace, includes a support, a data processing and/or data storage device and at least one temperature sensor, at least one receptacle for a sample of the heat treatment material being formed on the support, and the support being at least partially formed by a frame system.

Abstract: An industrial furnace system, particularly for producing ceramic materials and/or carbides, includes at least one furnace with a chamber having a loading opening for loading the chamber, a heating device and a closure device for the opening, a control device and a transfer device for transferring a crucible that can be placed in the chamber to and/or from the furnace. To remove the crucible from the chamber, the control device is configured to bring the closure device—by actuating the transfer device and/or depending on the position of the transfer device and/or an end effector thereof—into the release position and/or to allow for a crucible to be removed through the opening when the closure device is in the release position by actuating the transfer device and/or preferably depending on the transfer device and/or end effector position by actuating a removal device separate from the transfer device.

Abstract: The present invention relates to an apparatus for growing crystals. The apparatus comprises a chamber and a crucible being arranged in a heatable accommodation space of the chamber, wherein the crucible comprises an inner volume which is configured for growing crystals inside. The crucible comprises a bottom from which respective side walls extend to a top section of the crucible. The crucible comprises at least one a deposition section which is configured for attaching a seed crystal, wherein the deposition section is formed on at least one of the side wall and the top section of the crucible.

Abstract: A method for controlling a powertrain of a vehicle, the powertrain a dual-clutch transmission including a first clutch and a second clutch selectively actuated to transmit motion from the engine to a first shaft and a second shaft respectively. The method includes producing a first shift request for shifting from an initial gear to a different gear; in response to the first shift request, executing a first shift sequence to shift from the initial gear to the different gear; during execution of the first shift sequence, producing a second shift request for shifting from the different gear to the initial gear; in response to the second shift request: interrupting the first shift sequence prior to the first shift sequence having finished; and executing a second shift sequence to reverse the first shift sequence such that the transmission engages the initial gear for driving on the first shaft.

Abstract: A device for growing at least one artificially manufactured single crystal, in particular a sapphire single crystal, includes at least one crucible wall, the crucible wall having an open first end portion and a base-side second end portion arranged at a distance from the first end portion along a longitudinal axis, wherein when viewed from the at least one crucible wall in cross-section in relation to the longitudinal axis a crucible wall inner surface is defined, and at a distance of one wall thickness thereto a crucible wall outer surface is also defined, at least one crucible base, the crucible base being arranged in the base-side second end portion, and wherein a receiving area for the formation of the single crystal is defined by the crucible wall and the crucible base, wherein the crucible wall has constant thermal conductivity and/or identical mechanical properties across its entire extension.

Abstract: In a method of manufacturing a monocrystalline crystal, in particular a sapphire, a monocrystalline seed crystal is arranged in a base region of a crucible with a cylindrical jacket-shaped crucible wall or forms a base of the crucible and a crystallographic c-axis of the seed crystal is aligned corresponding to a longitudinal axis of the crucible extending in the direction of the top of the crucible wall, whereupon a base material is arranged above the seed crystal in the crucible and melted, crystal growth taking place progressively in the direction of the c-axis by crystallization at a boundary layer between melted base material and seed crystal.

Abstract: A device for growing single crystals, in particular of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the single crystals, wherein the device includes at least one seed crystal layer, wherein the seed crystal layer is assembled from multiple seed crystal plates in a tessellated manner.

Abstract: A method for controlling a powertrain of a vehicle having a dual-clutch transmission (DCT) includes: operating the DCT while the vehicle is in motion with a high or low transmission gear drivingly engaged; receiving a shift request to engage an other one of the high and low transmission gears; reducing an engine torque output and first and second clutch torques; shifting a subtransmission to a neutral gear setting; selecting a first gear or a second gear to drive the subtransmission; shifting the main transmission to engage the selected first or second gear; after shifting the main transmission, shifting the subtransmission to the other one of the high and low transmission gears; and after shifting the subtransmission, controlling the engine torque output and the first and second clutch torques according to a driver request at an accelerator of the vehicle.

Abstract: A device for aligning a metal blank for a temperature control system which has at least one temperature control unit for heating or cooling the metal blank includes at least two support rollers on which the metal blank can be placed and conveyed through the temperature control system by rotation of the support rollers in the throughput direction and within a conveying plane. The support rollers are arranged spaced apart in the throughput direction. The device further includes a first centering unit having at least one centering finger which is movably arranged within the conveying plane such that the centering finger is movable transversely to the throughput direction in order to align the metal blank in a predetermined orientation.

Abstract: A method for controlling an automatic transmission of a vehicle includes: sensing a speed of the vehicle; sensing an acceleration of the vehicle along three spatial axes; determining that the vehicle is in a jump state associated with the vehicle being off a ground surface, the jump state being defined at least in part by the acceleration of the vehicle along the three spatial axes and the speed of the vehicle; and controlling the transmission according to a jump strategy in response to determining that the vehicle is in the jump state. Other methods for controlling an automatic transmission of a vehicle are also contemplated.

Abstract: A vertical furnace for the continuous heat treatment of a metal strip, in particular for an electrical steel strip, as seen in the conveying direction of the metal strip, includes an inlet zone for the metal strip; a heating/holding zone with an annealing chamber for heating and holding the metal strip at a certain temperature; a first cooling zone for cooling the metal strip; and a deflection device, arranged downstream of the first cooling zone with at least one roller arrangement, for deflecting the metal strip in the direction of an outlet zone for the metal strip. At least one second cooling zone is arranged downstream of the deflection device with respect to the conveying direction.

Abstract: A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at least one seed crystal layer is located in the opening portion, the seed crystal layer being weighed down by a weighting mass at a side remote from the receptacle and being fixed, in particular exclusively, by the weight force of the weighting mass in its position against at least one holding portion located in the opening portion.

Abstract: A method for growing crystals using PVT or PVD or CVD, includes: providing: a chamber for crystal growth, a crucible in the chamber including at least one deposition section with a seed crystal and a base material for crystal growth, at least one temperature monitoring device, a gas supply device and at least one fluid inlet and outlet, and a pressure monitoring device; evacuating the chamber using a pumping device; flushing the chamber with an inert gas; heating the chamber to a growth temperature of 2000 to 2400° C. using at least one heating device; decreasing pressure to 0.1 to 100 mbar; supplying a dopant, (during a growth process); regulating process parameters in the growth process; increasing chamber pressure at the growth process end; cooling down the chamber; wherein the heating of the chamber from an ambient temperature to the growth temperature occurs within 10 to 10000 minutes.

Abstract: The present invention relates to a device for carrying component parts to be temperature-controlled, in particular coiled metal strips or metal wires, in a temperature-control device. The carrier device has a base body and a carrier element, to which a component part is attachable, wherein the carrier element is detachably attached to the base body. The base body has a transport coupling, which is configured such that the transport coupling is detachably fixable to a handling system for handling the device.

Abstract: A device for growing crystals, includes a crucible and an enveloping unit surrounding it for the thermal insulation of the crucible The enveloping unit is held on the crucible in its position relative thereto by a holding unit The holding unit includes at least one holding element designed to be oblong and preferably non-rigid, having a first and second end section The holding element surrounds the enveloping unit circumferentially on the side facing away from the crucible and contacts it.