Patents by Inventor Robert Edgar Davis

Robert Edgar Davis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Edge seal for thru-silicon-via technology
    Patent number: 7919834
    Abstract: One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier layer of nickel and a layer of nobel metal, such as, gold. To prevent edge attack of copper after dicing, the layer of nickel is formed to seal the copper edge. To also prevent edge attack of the layer of nickel after dicing, the layer of gold is formed to seal both the layer of copper and the layer of nickel.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: April 5, 2011
    Assignee: International Business Machines Corporation
    Inventors: Robert Edgar Davis, Robert Daniel Edwards, J. Edwin Hostetter, Jr., Ping-Chuan Wang, Kimball M. Watson
  • EDGE SEAL FOR THRU-SILICON-VIA TECHNOLOGY
    Publication number: 20090140395
    Abstract: One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier layer of nickel and a layer of nobel metal, such as, gold. To prevent edge attack of copper after dicing, the layer of nickel is formed to seal the copper edge. To also prevent edge attack of the layer of nickel after dicing, the layer of gold is formed to seal both the layer of copper and the layer of nickel.
    Type: Application
    Filed: December 4, 2007
    Publication date: June 4, 2009
    Applicant: International Business Machines Corporation
    Inventors: Robert Edgar Davis, Robert Daniel Edwards, J. Edwin Hostetter, JR., Ping-Chuan Wang, Kimball M. Watson