Abstract: A new method for making patterned magnetic storage media with magnetic and substantially non-magnetic zones utilizes a selective oxidation processes. Selective oxidation is achieved by subjecting a magnetic layer to an oxygen plasma through voids in a patterned mask. A high resolution patterned mask is made by embossing and reactive ion etch processes. The method is used to fabricate patterned magnetic disks media with alternating magnetic and non-magnetic zones ranging from 10 to 1000 Nanometers in width. Magnetic storage disks produced by this method have high-bit densities, minimal topography and reduced signal noise.

Abstract: A method planarizes a first pole piece layer of a write head by lapping without delaminating the first pole piece layer from an underlying second read gap layer on a wafer substrate. This is accomplished by separating or dicing the first pole piece material layer in a field region about rows and columns of first pole piece layers of magnetic head assemblies so as to reduce the stress of the first pole piece material layer in the field. Accordingly, when the wafer substrate is lapped, such as by chemical mechanical polishing (CMP), a reduced stress prevents the first pole piece material layer from delaminating from the second read gap layer during the lapping operation.

Abstract: A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to provide transverse and/or longitudinal bias fields to the free ferromagnetic layer. The MTJ is formed on an electrical lead on a substrate and is made up of a stack of layers.

Abstract: A magnetic tunnel junction (MTJ) magnetoresistive (MR) read head has one fixed ferromagnetic layer and one sensing ferromagnetic layer on opposite sides of the tunnel barrier layer, and with a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the sensing ferromagnetic layer to provide either longitudinal bias or transverse bias or a combination of longitudinal and transverse bias fields to the sensing ferromagnetic layer. The magnetic tunnel junction in the MTJ MR head is formed on an electrical lead on a substrate and is made up of a stack of layers.

Abstract: A magnetic tunnel junction magnetoresistive read head has one fixed ferromagnetic layer and one generally rectangularly shaped sensing ferromagnetic layer on opposite sides of the tunnel barrier layer, and a biasing ferromagnetic layer located around the side edges and back edges of the sensing ferromagnetic layer. An electrically insulating layer separates the biasing layer from the edges of the sensing layer. The biasing layer is a continuous boundary biasing layer that has side regions and a back region to surround the three edges of the sensing layer. When the biasing layer is a single layer with contiguous side and back regions its magnetic moment can be selected to make an angle with the long edges of the sensing layer. In this manner the biasing layer provides both a transverse bias field to compensate for transverse ferromagnetic coupling and magnetostatic coupling fields acting on the sensing layer to thus provide for a linear response of the head and a longitudinal bias field to stabilize the head.

Abstract: A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ sensing or free ferromagnetic layer also functioning as a flux guide to direct magnetic flux from the magnetic recording medium to the tunnel junction. The MTJ fixed ferromagnetic layer and the MTJ tunnel barrier layer have their front edges substantially coplanar with the sensing surface of the head. Both the fixed and free ferromagnetic layers are in contact with opposite surfaces of the MTJ tunnel barrier layer but the free ferromagnetic layer extends beyond the back edge of either the tunnel barrier layer or the fixed ferromagnetic layer, whichever back edge is closer to the sensing surface. This assures that the magnetic flux is non-zero in the tunnel junction region.

Abstract: A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ device located between two spaced-apart magnetic shields. The magnetic shields, which allow the head to detect individual magnetic transitions from the magnetic recording medium without interference from neighboring transitions, also function as electrical leads for connection of the head to sense circuitry. Electrically conductive spacer layers are located at the top and bottom of the MTJ device and connect the MTJ device to the shields. The thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium.

Abstract: A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ sensing or free ferromagnetic layer also functioning as a flux guide to direct magnetic flux from the magnetic recording medium to the tunnel junction. The MTJ fixed ferromagnetic layer has its front edge recessed from the sensing surface of the head. Both the fixed and free ferromagnetic layers are in contact with opposite surfaces of the MTJ tunnel barrier layer but the free ferromagnetic layer extends beyond the back edge of either the tunnel barrier layer or the fixed ferromagnetic layer, whichever back edge is closer to the sensing surface. This assures that the magnetic flux is non-zero in the tunnel junction region. The magnetization direction of the fixed ferromagnetic layer is fixed in a direction generally perpendicular to the sensing surface and thus to the magnetic recording medium, preferably by interfacial exchange coupling with an antiferromagnetic layer.

Abstract: A magnetic recording disk drive uses side-by-side read/write heads formed on head carriers that are identical for both top and bottom disk surfaces. Thus, a common head carrier functions as a single manufacturable part usable for both top and bottom disk surfaces. The common head carrier has a trailing end with a pattern of components formed on it that includes three side-by-side transducers (two read elements equally spaced about a center write element) and five terminal pads, one of which is a common pad, and all of the electrical connectors interconnecting the five terminal pads with the three transducers. There are only three terminal pads for the two read elements, with one of the read terminal pads being a common terminal pad that is electrically connected to both read elements. During assembly of the disk drive, the common carrier, when used as the top carrier, has a first read terminal pad and the common terminal pad connected to the leads on the suspension.

Abstract: A magnetoresistive (MR) head having a double self-aligned contiguous junction includes an MR sensor structure with a biased guide joined thereto. The guide is formed using a first resist mask applied over the MR sensor structure. A guide biasing structure is formed using the first resist mask and a second resist mask applied over the first resist mask and the guide. The first resist mask is configured to form a double self-aligned contiguous junction between the MR sensor structure and the guide and guide bias structure. In this manner, the position of the guide biasing structure is carefully controlled so that it does not overlap the MR sensor structure.

Abstract: A microfabricated wobble motor with a positioning arm attached to the wobble motor rotor acts as a fine positioner with bidirectional movement. The primary application is a rotary actuator for the read/write head in a very small magnetic recording disk drive. An integrated head-arm assembly is attached at one end to the rotor of the wobble motor. The other end of the head-arm assembly has a head carrier that is maintained in contact with the disk. Head position error information is read from the disk and used to provide control signals to each of the stator elements. The stator elements are sequentially addressed by applying a voltage from a driver circuit. This causes the rotor to be electrostatically attracted to the activated stators, so that the rotor is movable bidirectionally. The read/write head can thus be moved bidirectionally to any of the data tracks on the disk and maintained on a desired data track for reading or writing data.

Abstract: A magnetic recording disk drive uses side-by-side read/write heads formed on head carriers that are substantially identical for both top and bottom disk surfaces. Thus, a common head carrier functions as a single manufacturable part usable for both top and bottom disk surfaces. The common head carrier has a trailing end with a pattern of components formed on it that includes three side-by-side transducers and sets of terminal pads. In the read/write/read side-by-side head arrangement, the first element is a center write element, such as an inductive coil, and the second and third elements are read elements, such as magnetoresistive read elements, that are generally equally spaced from the center write element.

Abstract: A disk drive assembly in which the suspension and read/write transducer are integrated into a combination assembly and fabricated using thin film deposition techniques thereby producing an assembly which is very low in mass permitting contact recording. In one embodiment, transducers are deposited in a row and column configuration onto a release and support layer covering a wafer substrate having a thickness equal to a desired suspension length. The wafer is separated into a plurality of row sections, with each row section providing one thin film transducer from each column. A second release layer is formed on a separated side on the row section and thin layers of suitable materials are deposited to form a suspension layer including conductive lines extending to the thin film transducers. The first and second release layers are dissolved and the row section is further cut to form the individual combination assemblies.

Abstract: A contact recording disk file uses an integrated head-suspension assembly having a head carrier with a dual-layer wear pad for contacting the disk during read and write operations. The outer wear layer of the pad is relatively soft and wear prone compared to a harder and more wear-resistant inner layer. The outer wear layer wears away at a relatively rapid rate during initial wear-in of the head carrier. In this manner the head pole pieces, which extend into the wear pad, are rapidly put into contact with the disk, thereby compensating for initial misalignment of the wear pad with the surface of the disk. The inner wear layer then provides wear resistance over the life of the disk file. In the preferred embodiment, both the outer and inner wear layers are formed of essentially amorphous carbon doped with different amounts of hydrogen.

Abstract: A magnetic tunnel junction device for use as a magnetic memory cell or a magnetic field sensor has one fixed ferromagnetic layer and one sensing ferromagnetic layer formed on opposite sides of the insulating tunnel barrier layer, and a hard biasing ferromagnetic layer that is electrically insulated from but yet magnetostatically coupled with the sensing ferromagnetic layer. The magnetic tunnel junction in the device is formed on an electrical lead on a substrate and is made up of a stack of layers. The layers in the stack are an antiferromagnetic layer, a fixed ferromagnetic layer exchange biased with the antfferromagnetic layer so that its magnetic moment cannot rotate in the presence of an applied magnetic field, an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer, and a sensing ferromagnetic layer in contact with the tunnel barrier layer and whose magnetic moment is free to rotate in the presence of an applied magnetic field.

Abstract: A spin valve magnetoresistive (SVMR) sensor uses a laminated antiparallel (AP) pinned layer in combination with an improved antiferromagnetic (AF) exchange biasing layer. The pinned layer comprises two ferromagnetic films separated by a nonmagnetic coupling film such that the magnetizations of the two ferromagnetic films are strongly coupled together antiferromagnetically in an antiparallel orientation. This laminated AP pinned layer is magnetically rigid in the small field excitations required to rotate the SVMR sensor's free layer. When the magnetic moments of the two ferromagnetic layers in this AP pinned layer are nearly the same, the net magnetic moment of the pinned layer is small. However, the exchange field is correspondingly large because it is inversely proportional to the net magnetic moment. The laminated AP pinned layer has its magnetization fixed or pinned by an AF material that is highly corrosion resistant but that has an exchange anisotropy too low to be usable in conventional SVMR sensors.