Abstract: Apparatuses and systems for dissipating ESD events are provided. In an embodiment, an integrated circuit (IC) device, includes a ground rail, a positive supply rail, a negative supply rail, a circuit block, a plurality of contact pads, the circuit block being configured to output an output voltage via a first contact pad of the plurality of contact pads and a range of the output voltage being is between a voltage of the positive supply rail and a voltage of the negative supply rail, and a coupling system that couples the first contact pad to a second contact pad of the plurality of contact pads so as to dissipate an electrostatic discharge (ESD) event between the first and second contact pads.

Abstract: Apparatuses and systems for dissipating ESD events are provided. In an embodiment, an integrated circuit (IC) device, includes a ground rail, a positive supply rail, a negative supply rail, a circuit block, a plurality of contact pads, the circuit block being configured to output an output voltage via a first contact pad of the plurality of contact pads and a range of the output voltage being is between a voltage of the positive supply rail and a voltage of the negative supply rail, and a coupling system that couples the first contact pad to a second contact pad of the plurality of contact pads so as to dissipate an electrostatic discharge (ESD) event between the first and second contact pads.

Abstract: Apparatuses and systems for dissipating ESD events are provided. In an embodiment, an integrated circuit (IC) device, includes a ground rail, a positive supply rail, a negative supply rail, a circuit block, a plurality of contact pads, and a coupling system. Each of the ground rail, positive supply rail, negative supply rail, and the circuit block are coupled to a respective contact pad of the plurality of contact pads. The contact pad coupled to the circuit block is configured to swing from a voltage of the negative rail to a voltage of the positive rail. The coupling system couples each contact pad of the plurality of contact pads to all other contact pads of the plurality of contact pads, whereby an electrostatic discharge (ESD) event between two contacts pads of the plurality of contact pads can be dissipated.

Abstract: Apparatuses and systems for dissipating ESD events are provided. In an embodiment, an integrated circuit (IC) device, includes a ground rail, a positive supply rail, a negative supply rail, a circuit block, a plurality of contact pads, and a coupling system. Each of the ground rail, positive supply rail, negative supply rail, and the circuit block are coupled to a respective contact pad of the plurality of contact pads. The contact pad coupled to the circuit block is configured to swing from a voltage of the negative rail to a voltage of the positive rail. The coupling system couples each contact pad of the plurality of contact pads to all other contact pads of the plurality of contact pads, whereby an electrostatic discharge (ESD) event between two contacts pads of the plurality of contact pads can be dissipated.

Abstract: Systems and methods are disclosed for operating a core circuitry of an integrated circuit at a lower voltage than the coupled IO circuitry using a tolerant circuit. In one embodiment includes a voltage tolerant circuit comprising a voltage detect module adapted to detect when a voltage is sufficient to switch bias conditions without violating maximum transistor operating conditions and a comparator adapted to detect when a PAD voltage is greater than an IO power supply voltage.

Abstract: Systems and methods are disclosed for reducing or eliminating hot carrier injection stress in circuits. In one embodiment, the present invention relates to an integrated circuit comprising an IO PAD, an output circuit coupled to at least the IO PAD and a stress circuit. The stress circuit is coupled to at least the output circuit and is adapted to limit a high voltage across the output circuit when the output circuit is enabled, thereby reducing stress on the output circuit. In one embodiment, the stress circuit comprises at least one transistor device (a p-channel device or two stacked p-channel devices, for example) and the output circuit comprises a transistor device (an n-channel device or two stacked n-channel devices).

Abstract: Systems and methods are disclosed for operating a core circuitry of an integrated circuit at a lower voltage than the coupled IO circuitry using a tolerant circuit. In one embodiment includes a voltage tolerant circuit comprising a voltage detect module adapted to detect when a voltage is sufficient to switch bias conditions without violating maximum transistor operating conditions and a comparator adapted to detect when a PAD voltage is greater than an IO power supply voltage.

Abstract: Systems and methods are disclosed for operating a core circuitry of an integrated circuit at a lower voltage than the coupled IO circuitry using a tolerant circuit. In one embodiment includes a voltage tolerant circuit comprising a voltage detect module adapted to detect when a voltage is sufficient to switch bias conditions without violating maximum transistor operating conditions and a comparator adapted to detect when a PAD voltage is greater than an IO power supply voltage.

Abstract: Methods are disclosed for translating or shifting a voltage level of a single ended input. More specifically, the present invention provides a method of translating or shifting a voltage level that doesn't require a complementary input or an additional power supply if the complementary signal isn't available. One embodiment of the method of translating a voltage level of a single-ended input signal using at least one native transistor device having a threshold voltage less than 0V comprises outputting a first voltage level if the single ended input signal is in a first state. A second voltage level is output if the single ended input is in a second state.

Abstract: Systems and methods are disclosed for operating a core circuitry of an integrated circuit at a lower voltage than the coupled IO circuitry using a tolerant circuit. In one embodiment includes a voltage tolerant circuit comprising a voltage detect module adapted to detect when a voltage is sufficient to switch bias conditions without violating maximum transistor operating conditions and a comparator adapted to detect when a PAD voltage is greater than an IO power supply voltage.

Abstract: Systems and methods are disclosed for reducing or eliminating hot carrier injection stress in circuits. In one embodiment, the present invention relates to an integrated circuit comprising an IO PAD, an output circuit coupled to at least the IO PAD and a stress circuit. The stress circuit is coupled to at least the output circuit and is adapted to limit a high voltage across the output circuit when the output circuit is enabled, thereby reducing stress on the output circuit. In one embodiment, the stress circuit comprises at least one transistor device (a p-channel device or two stacked p-channel devices, for example) and the output circuit comprises a transistor device (an n-channel device or two stacked n-channel devices).