Patents by Inventor Robert Entner

Robert Entner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Temperature-compensated oscillator
    Patent number: 10032106
    Abstract: The disclosure relates to a temperature-controlled oscillator.
    Type: Grant
    Filed: January 28, 2017
    Date of Patent: July 24, 2018
    Assignee: NXP B.V.
    Inventor: Robert Entner
  • TEMPERATURE-COMPENSATED OSCILLATOR
    Publication number: 20170220918
    Abstract: The disclosure relates to a temperature-controlled oscillator.
    Type: Application
    Filed: January 28, 2017
    Publication date: August 3, 2017
    Inventor: Robert Entner
  • Sub-stage for a charge pump
    Patent number: 8362825
    Abstract: A sub-stage for a charge pump includes a dc input pin, a dc output pin, a first radio frequency (rf) input pin configured to receive a first differential signal, a second rf input pin configured to receive a second differential signal, a first transistor having first, second and third terminals, a second transistor having first, second and third terminals, a first bias voltage source, and a second bias voltage source. The third terminal of the first transistor is configured to receive the second differential signal from the second rf input pin and a first offset voltage signal from the first bias voltage source. The third terminal of the second transistor is configured to receive the second differential signal from the second rf input pin and a second offset voltage signal from the second bias voltage source.
    Type: Grant
    Filed: December 18, 2010
    Date of Patent: January 29, 2013
    Assignee: NXP B.V.
    Inventors: Ewald Bergler, Roland Brandl, Robert Spindler, Robert Entner
  • SUB-STAGE FOR A CHARGE PUMP
    Publication number: 20110316618
    Abstract: A sub-stage (212) for a charge pump (200) having a first and second phase of operation. The sub-stage (212) comprising a dc input pin (222); a dc output pin (220); a first rf input pin (202) configured to receive a first differential signal; and a second rf input pin (204) configured to receive a second differential signal. The sub-stage (212) further comprising a first transistor (224) having a first, second and third terminal, wherein a current channel is provided between the first and second terminal of the transistor (224); and a second transistor (226) having a first, second and third terminal, wherein a current channel is provided between the first and second terminal of the transistor (226). The first terminal of the first transistor (224) is connected to the dc input pin (222), the second terminal of the first transistor (224) is connected to the first terminal of the second transistor (226), and the second terminal of the second transistor (226) is connected to the dc output pin (220).
    Type: Application
    Filed: December 18, 2010
    Publication date: December 29, 2011
    Applicant: NXP B.V.
    Inventors: Ewald BERGLER, Roland BRANDL, Robert SPINDLER, Robert ENTNER
  • CAPACITANCE UNDER A FRINGE CAPACITOR OF A RADIO FRQUENCY INTEGRATED CIRCUIT
    Publication number: 20110168782
    Abstract: A capacitance system for a radio frequency (RF) charge pump of an RF integrated circuit (IC) includes a fringe capacitor, a second capacitor, and a silicon substrate region. The fringe capacitor is made of backend masks. The second capacitor is located underneath the fringe capacitor. The silicon substrate region is located underneath the second capacitor.
    Type: Application
    Filed: January 12, 2010
    Publication date: July 14, 2011
    Applicant: NXP B.V.
    Inventors: EWALD BERGLER, ROLAND BRANDL, ROBERT SPINDLER, ROBERT ENTNER