Abstract: A method forms an image with a reconfigurable array of mirrors. The method includes configuring the array by translating some of the mirrors such that distances of the mirrors of the array from a reference plane have a non-uniform spatial distribution. The method includes illuminating the configured array with a coherent light beam such that part of the light beam is reflected off the array and is projected on a planar viewing screen.

Abstract: A MEMS microphone is fabricated into an integrated physical device which also comprises a solar cell. The solar cell provides power to the MEMS microphone, and may do so with use of a capacitor, which may also be incorporated into the device, and serves to provide power to the MEMS microphone when the solar cell is unable to do so (e.g., at night). A wireless transmitter and antenna may also be incorporated into the device, in order to transmit acoustic data which has been captured by the MEMS microphone. In one embodiment of the invention, the MEMS microphone comprises a fixed backplate and a diaphragm, and the solar cell is advantageously comprised in the diaphragm thereof.

Abstract: An improved PIN photodiode provides enhanced linearity by confining the light absorption region of the diode wholly within the depletion region. The photodiode exhibits improved linearity over prior art designs because the thickness of the absorption region is no longer a function of changes in the size of the depletion region during device operation. Keeping the absorption region wholly within the depletion region ensures that the charge carriers generated by incident illumination will increase the conductivity of the semiconductor material.

Abstract: A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region and the i region which substantially decreases the capacitance of the PIN photodiode such that the photodiode bandwidth is maximized. Typically, the buffer region is formed as a layer of indium phosphide that is at least approximately 0.5 &mgr;m in thickness.

Abstract: An improved PIN photodiode provides enhanced linearity by confining the light absorption region of the diode wholly within the depletion region. The photodiode exhibits improved linearity over prior art designs because the thickness of the absorption region is no longer a function of changes in the size of the depletion region during device operation. Keeping the absorption region wholly within the depletion region ensures that the charge carriers generated by incident illumination will increase the conductivity of the semiconductor material.