Abstract: Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a cross-section having a first section, a second section substantially parallel to the first section, and a third section joining the first section and the second section.

Abstract: Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

Abstract: Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

Abstract: Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a cross-section having a first section, a second section substantially parallel to the first section, and a third section joining the first section and the second section.

Abstract: Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

Abstract: Techniques are disclosed for systems and methods for facilitating pixel readout with partitioned analog-to-digital conversion. A device includes a detector, a capacitor coupled to the detector, a counter circuit coupled to the capacitor, a reset circuit coupled to the capacitor, and a processing circuit. The detector is configured to detect electromagnetic radiation associated with a scene and generate an associated detection signal. The capacitor is configured to, during an integration period, accumulate a voltage based on the detection signal. The counter circuit is configured to, during the integration period, adjust a counter value based on a comparison of the voltage and a reference voltage. The reset circuit is configured to, during the integration period, reset the capacitor based on the comparison. The processing circuit is configured to generate a digital detector output based on the counter value when the integration period has elapsed. Related methods are also provided.

Abstract: Techniques to set a frame rate and associated device manufacturing are disclosed. In one example, an imaging device includes a detector array configured to detect electromagnetic radiation associated with a scene and provide image data frames according to a first frame rate. The imaging device further includes a readout circuit configured to provide the image data frames according to a frame rate for the readout circuit. The imaging device further includes a fuse configured to set the frame rate for the readout circuit. Related methods and systems are also provided.

Abstract: A bolometer circuit includes a substrate on which a focal plane array (FPA) of active bolometers is provided. Each active bolometer is configured to receive external infrared (IR) radiation and substantially thermally isolated from the substrate. The bolometer circuit also includes one or more blind arrays of blind bolometers shielded from the external IR radiation and substantially thermally isolated from the substrate. Noises in outputs from each column and/or each row of the FPA are corrected, reduced, or suppressed based on a statistical property of outputs from a corresponding column or row of the one or more blind arrays. Noise in each frame of IR image captured by the FPA may also be corrected, reduced, or suppressed using the one or more blind arrays.

Abstract: Techniques are disclosed for facilitating burst mode calibration sensing and image mode sensing. In one example, a device includes a detector array configured to detect electromagnetic radiation and provide image data frames according to a first frame rate. The device further includes a logic circuit configured to determine whether a threshold delay has elapsed. The device further includes a frame output circuit configured to: provide, based at least on the threshold delay having elapsed, the image data frames according to the first frame rate; and provide, based at least on the threshold delay not having elapsed, the image data frames according to a second frame rate lower than the first frame rate. Related methods and systems are also provided.

Abstract: Techniques are disclosed for facilitating burst mode calibration sensing and image mode sensing. In one example, a device includes a detector array configured to detect electromagnetic radiation and provide image data frames according to a first frame rate. The device further includes a logic circuit configured to determine whether a threshold delay has elapsed. The device further includes a frame output circuit configured to: provide, based at least on the threshold delay having elapsed, the image data frames according to the first frame rate; and provide, based at least on the threshold delay not having elapsed, the image data frames according to a second frame rate lower than the first frame rate. Related methods and systems are also provided.

Abstract: Techniques to set a frame rate and associated device manufacturing are disclosed. In one example, an imaging device includes a detector array configured to detect electromagnetic radiation associated with a scene and provide image data frames according to a first frame rate. The imaging device further includes a readout circuit configured to provide the image data frames according to a frame rate for the readout circuit. The imaging device further includes a fuse configured to set the frame rate for the readout circuit. Related methods and systems are also provided.

Abstract: A device is disclosed including a substrate and a floating blinded infrared detector and/or a shunted blinded infrared detector. The floating blinded infrared detector may include an infrared detector coupled to and thermally isolated from the substrate; and a blocking structure disposed above the infrared detector to block external thermal radiation from being received by the infrared detector; and wherein the blocking structure comprises a plurality of openings. The shunted blinded infrared detector may include an additional infrared detector coupled to the substrate; an additional blocking structure disposed above the infrared detector to block external thermal radiation from being received by the additional infrared detector; and a material that thermally couples the additional infrared detector to the substrate and the additional blocking structure. Methods for using and forming the device are also disclosed.

Abstract: A bolometer circuit includes a substrate on which a focal plane array (FPA) of active bolometers is provided. Each active bolometer is configured to receive external infrared (IR) radiation and substantially thermally isolated from the substrate. The bolometer circuit also includes one or more blind arrays of blind bolometers shielded from the external IR radiation and substantially thermally isolated from the substrate. Noises in outputs from each column and/or each row of the FPA are corrected, reduced, or suppressed based on a statistical property of outputs from a corresponding column or row of the one or more blind arrays. Noise in each frame of IR image captured by the FPA may also be corrected, reduced, or suppressed using the one or more blind arrays.

Abstract: Techniques are disclosed for systems and methods for facilitating pixel readout with partitioned analog-to-digital conversion. A device includes a detector, a capacitor coupled to the detector, a counter circuit coupled to the capacitor, a reset circuit coupled to the capacitor, and a processing circuit. The detector is configured to detect electromagnetic radiation associated with a scene and generate an associated detection signal. The capacitor is configured to, during an integration period, accumulate a voltage based on the detection signal. The counter circuit is configured to, during the integration period, adjust a counter value based on a comparison of the voltage and a reference voltage. The reset circuit is io configured to, during the integration period, reset the capacitor based on the comparison. The processing circuit is configured to generate a digital detector output based on the counter value when the integration period has elapsed. Related methods are also provided.

Abstract: A bolometer circuit may include an active bolometer configured to receive external infrared (IR) radiation and a resistive load, which are configured to be connected in series in a bolometer conduction path from a supply voltage node to a common voltage node. A node in the bolometer conduction path between the resistive load and the active bolometer is coupled to a first input of an op-amp. A variable voltage source is coupled to a second input of the op-amp to provide a reference voltage level. The op-amp maintains the reference voltage level at the first input to generate a current flow in response to a resistance change of the active bolometer due to the external IR radiation. The amplifier circuit may be configured as a feedback amplifier or an integrating amplifier. The bolometer circuit may be configured to enable a low-power mode of operation.

Abstract: Systems and methods may be provided for forming enhanced infrared absorption microbolometers. An enhanced infrared absorption microbolometer may include a metal cap formed from a thin layer of oxidizing metal such as titanium and/or a titanium oxide. The metal cap may be formed within a bridge portion of the microbolometer. The bridge portion may include other layers such as first and second absorber layers disposed on opposing sides of a layer of temperature sensitive resistive material. The layer of temperature sensitive resistive material may be located between the metal cap and a reflecting metal layer formed on a readout integrated circuit for the microbolometer.

Abstract: A bolometer circuit may include an active bolometer configured to receive external infrared (IR) radiation and a resistive load, which are configured to be connected in series in a bolometer conduction path from a supply voltage node to a common voltage node. A node in the bolometer conduction path between the resistive load and the active bolometer is coupled to a first input of an op-amp. A variable voltage source is coupled to a second input of the op-amp to provide a reference voltage level. The op-amp maintains the reference voltage level at the first input to generate a current flow in response to a resistance change of the active bolometer due to the external IR radiation. The amplifier circuit may be configured as a feedback amplifier or an integrating amplifier. The bolometer circuit may be configured to enable a low-power mode of operation.

Abstract: A device is disclosed including a substrate and a floating blinded infrared detector and/or a shunted blinded infrared detector. The floating blinded infrared detector may include an infrared detector coupled to and thermally isolated from the substrate; and a blocking structure disposed above the infrared detector to block external thermal radiation from being received by the infrared detector; and wherein the blocking structure comprises a plurality of openings. The shunted blinded infrared detector may include an additional infrared detector coupled to the substrate; an additional blocking structure disposed above the infrared detector to block external thermal radiation from being received by the additional infrared detector; and a material that thermally couples the additional infrared detector to the substrate and the additional blocking structure. Methods for using and forming the device are also disclosed.

Abstract: Systems and methods may be provided for forming enhanced infrared absorption microbolometers. An enhanced infrared absorption microbolometer may include a metal cap formed from a thin layer of oxidizing metal such as titanium and/or a titanium oxide. The metal cap may be formed within a bridge portion of the microbolometer. The bridge portion may include other layers such as first and second absorber layers disposed on opposing sides of a layer of temperature sensitive resistive material. The layer of temperature sensitive resistive material may be located between the metal cap and a reflecting metal layer formed on a readout integrated circuit for the microbolometer.

Abstract: A microbolometer is disclosed, including a bottom multilayered dielectric, having a first silicon oxynitride layer and a second silicon oxynitride layer disposed above the first silicon oxynitride layer, the first and second silicon oxynitride layers having different refractive indices. The microbolometer further includes a detector layer disposed above the bottom multilayered dielectric, the detector layer comprised of a temperature sensitive resistive material, and a top dielectric disposed above the detector layer.