Abstract: Metal oxide films are reduced to metal with an atmospheric pressure argon and hydrogen plasma at temperatures between 25 and 250° C. A 40-nm-thick copper oxide layer on a copper-coated silicon wafer, 300 mm in diameter, can be fully removed by the argon and hydrogen plasma in under two minutes at 150° C. The fast rate of metal oxide reduction to metal demonstrates that this process is well suited for front- and back-end semiconductor manufacturing, such as for example, flux-free flip chip bonding of microbumps.

Abstract: A method for using a handheld plasma tool for controlled application of low temperature atmospheric pressure plasma to material surfaces, e.g. to enhance bonding and or cleaning is disclosed. The handheld plasma tool can include a hand grip, on/off trigger, display, indicator lights, indexing pin, marking device, cable connections for gas supply and electrical power, and a plasma head for generating at least one reactive gas species at a low temperature. The handheld plasma tool can employ a rotatable clamp for treating backside surfaces. The handheld plasma tool can include motorized wheels to scan over a large area at a controlled speed. Other optional nozzles can also be employed for specialized applications.

Abstract: Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.

Abstract: Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

Abstract: Atmospheric pressure plasma devices and methods for preparing the surfaces of fasteners, e.g. nutplates, for adhesive bonding are disclosed. A device supports a fastener to dispose a contact surface of the fastener to receive an atmospheric pressure plasma flow, thereby activating the contact surface to be bonded. A spacer is used to properly support the fastener to receive the plasma treatment. A spacer can comprise beveled edges of a grounded enclosure which electrically connects the contact surface of the fastener to the plasma generator where plasma is formed in a gas flow along the electrodes. Alternately, a spacer can comprise a plurality of standoffs on a showerhead port comprising a ground electrode of the plasma generator where plasma is formed in a gas flow across the electrodes.

Abstract: A handheld plasma tool for controlled application of low temperature atmospheric pressure plasma to material surfaces, e.g. to enhance bonding and or cleaning. The handheld plasma tool can include a hand grip, on/off trigger, display, indicator lights, indexing pin, marking device, cable connections for gas supply and electrical power, and a plasma head for generating at least one reactive gas species at a low temperature. The handheld plasma tool can employ a rotatable clamp for treating backside surfaces. The handheld plasma tool can include motorized wheels to scan over a large area at a controlled speed. Other optional nozzles can also be employed for specialized applications.

Abstract: Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

Abstract: Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.

Abstract: Techniques for producing composites outside of an autoclave that have smooth surface finishes are disclosed. The smooth composite surface, free of porosity, can be fabricated by curing the prepreg in a tool that includes a novel microstructure. In conventional composite manufacturing, some degree of porosity appears to originate from trapped gas bubbles that form during curing. The microstructure can provide a mechanism for the gas bubbles to escape from the tooling, thereby eliminating porosity and yielding a smooth surface finish on the out-of-autoclave composite. The microstructure can be applied to the tool surface using an inkjet process applying an acrylic resin curable with ultraviolet light.

Abstract: Plasma applications are disclosed that operate with helium or argon at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes is heated which enables operation at conditions where the helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; activate the surfaces of materials thereby enhancing adhesion between the material and an adhesive; kill microorganisms on a surface, thereby sterilizing the substrate; etches thin films of materials from a substrate, and deposit thin films and coatings onto a substrate.

Abstract: An argon and helium plasma apparatus and method are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes is heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The apparatus and method can be employed to remove organic materials from a substrate, thereby cleaning the substrate; activate the surfaces of materials thereby enhancing adhesion between the material and an adhesive; kill microorganisms on a surface, thereby sterilizing the substrate; etches thin films of materials from a substrate, and deposit thin films and coatings onto a substrate.

Abstract: Apparatuses and methods for treating wounds are disclosed. An apparatus for treating wounds is disclosed comprising an instrument for generating a low temperature, atmospheric pressure plasma, a means of flowing gas comprising mixing an inert gas and a reactive gas through the instrument, and a means of contacting the wound with the reactive gases flowing out of the instrument. A method for treating wounds using reactive gases is disclosed. The use of atmospheric pressure plasmas for treating wounds is also disclosed.

Abstract: A method for bonding composites together that is fast and effective, and can be applied to any structure regardless of its size and shape, and its related product are disclosed. The method comprises first subjecting at least a part of a composite work piece to a low-temperature, atmospheric pressure plasma, wherein the reactive gas from the plasma is projected out of the device and onto the surface of the composite work piece, then applying an adhesive to the surface of the treated composite work piece, and joining the composite work piece together with a second work piece. The adhesive may be cured such that it forms a strong, permanent bond. The atmospheric plasma delivery device may be translated over the composite surface by hand or with a robot. The plasma device may be self-contained and portable, and can be moved to a location that is convenient for treating the composites.

Abstract: Apparatuses and methods for treating wounds are disclosed. An apparatus for treating wounds is disclosed comprising an instrument for generating a low temperature, atmospheric pressure plasma, a means of flowing gas through the instrument, and a means of contacting the wound with the reactive gases flowing out of the instrument. A method for treating wounds using reactive gases is disclosed. The use of atmospheric pressure plasmas for treating wounds is also disclosed.

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom.

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom.

Abstract: Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode.

Abstract: Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 Å/min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.

Abstract: A process for CVD including plasma enhanced and laser induced CVD using one or more precursor film forming metal compounds as the major film forming metal precursor, for example organotungsten, which is admixed with minor amounts of a precursor catalytic metal compound, for example, an organoplatinum compound, as a precursor to a catalytic metal in the presence of hydrogen gas to provide improved purity of deposited metal films having residual amounts of the catalytic metal incorporated therein.

Abstract: A process for coating metal on a substrate. The process uses organometallic compounds such as (trimethyl)(cyclopentadienyl) platinum in the presence of a reducing fluid such as hydrogen gas to produce high purity films capable of selective deposition on substrates containing, for example, tungsten and silicon. The films are deposited using chemical vapor deposition (CVD) or gas phase laser deposition. The invention also comprises devices made from the process of the invention.