Patents by Inventor Robert F. Reihl

Robert F. Reihl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making low resistance contacts in semiconductor devices by ion induced silicides
    Patent number: 4339869
    Abstract: A low resistance electrical contact is made to a silicon substrate by forming a layer of a refractory metal on the substrate and thereafter applying a dosage of ions through the layer of refractory metal to the substrate to form a layer of a compound of the refractory metal and silicon at the interface of the layer of refractory metal and the silicon substrate.
    Type: Grant
    Filed: September 15, 1980
    Date of Patent: July 20, 1982
    Assignee: General Electric Company
    Inventors: Robert F. Reihl, Kang-Lung Wang