Abstract: An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.

Abstract: An integrated circuit and a method of manufacturing an integrated circuit is provided including providing an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is formed over the dielectric layer in the trench and via, and a conductor is deposited over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.

Abstract: A method of forming an electrically conductive via. A first electrically conductive layer is formed, and a second layer is formed on the first layer. The second layer has desired barrier layer properties. A third non electrically conductive layer is formed on the second layer. A via hole is etched through the third layer, thereby exposing a portion of the second layer at the bottom of the via hole. The exposed portion of the second layer at the bottom of the via hole is redistributed so that at least a portion of the second layer is removed from the bottom of the via hole and deposited on lower portions of the sidewalls of the via hole. A fourth electrically conductive layer is formed within the via hole to form the electrically conductive via.

Abstract: Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles.

Abstract: Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so- that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles.

Abstract: Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles.

Abstract: Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles.

Abstract: Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles.

Abstract: A process for fabrication of a multilevel interconnect structure includes the formation of an inlaid interconnect (42) overlying an aluminum layer (34). The inlaid interconnect (42) is formed within an interlevel dielectric layer that is processed to contain an interconnect channel (24) and a via opening (14) residing at the bottom of the interconnect channel (24). The aluminum layer (34) is selectively deposited to fill the via opening (14) at the bottom of an interconnect channel (24). Selective deposition is enhanced by the use of a nucleation layer (20) which is formed on the bottom of the via opening, without being formed on the sidewalls, by use of directional deposition technique such as inductively coupled plasma (ICP) deposition. Nucleation layer (20) eases requirements of a cleaning operation prior to selective deposition and provides a surface from which void-free selective growth can occur.

Abstract: A method of decreasing resistivity in an electrically conductive layer (23) includes providing a substrate (14), using a high density plasma sputtering technique to deposit the electrically conductive layer (23) over the substrate (14), and exposing the electrically conductive layer (23) to an anneal in an ambient comprised of a plasma (21).

Abstract: A metal deposition process in which a high-purity metal film (46) is sputter deposited within a sputtering system (10) having insitu passivated metal components. A sputtering target (14) is provided having a thin aluminum coating (44) overlying a refractory metal layer (42). During operation, the aluminum coating (44) is sputtered away from the target (14) and onto exposed metal surfaces within the vacuum chamber (20) of the sputter deposition system (10). Subsequently, a semiconductor substrate (38) is placed in the sputter deposition system (10) and a high-purity metal film (46) is deposited onto the semiconductor substrate (38). Because the insitu passivation process avoid the oxidation of the passivating aluminum, refractory metal sputtered away from the target (14) adheres to the passivating aluminum layer, and does not re-deposit onto the surface of the semiconductor substrate (38) during the sputter deposition process.