Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.

Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.

Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.

Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.

Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.

Abstract: Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.

Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.

Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.

Abstract: A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.

Abstract: A method and structure for a solar cell forms and utilizes a low resistivity and high transmission semiconductor in a top and/or bottom layer (e.g., a top or bottom contact). Some embodiments relate to solar cells having a top or bottom transparent contact layer comprising doped cadmium oxide (CdO) or alloys of CdO.

Abstract: Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.

Abstract: A transceiver preferably embedded within a wearable security watch, PDA, or other device which achieves a variety of wireless ultrasonic and/or radio-frequency based functions, including digital identification and proximity and sensation monitoring of assets, individuals, pets, and the like. The portable or wearable device realizes these functions by periodically polling and receiving information tags within the transmitting distance of the device. The invention can help reduce the likelihood of the theft, loss, or misplacement by detecting that a tag associated with or attached to an entity has left an individual's proximity and sounding an alarm. The device can also assist individuals with sensory impairments, including persons who are deaf, diabetic, and the like, by detecting a tagged entity as it enters the space around an individual, or by detecting environmental stimuli, such as excessive heat in an individual's proximity or vital sign changes, and sounding an alarm.

Abstract: A rigid-flex circuit board system that can be manufactured using less expensive and more reliable rigid circuit board methods and equipment, and can maintain rigidity and dimensional stability until the time when it is first desired to flex.

Abstract: A transceiver preferably embedded within a wearable security watch, PDA, or other device which achieves a variety of wireless ultrasonic and/or radio-frequency based functions, including digital identification and proximity and sensation monitoring of assets, individuals, pets, and the like. The portable or wearable device realizes these functions by periodically polling and receiving information tags within the transmitting distance of the device. The invention can help reduce the likelihood of the theft, loss, or misplacement by detecting that a tag associated with or attached to an entity has left an individual's proximity and sounding an alarm. The device can also assist individuals with sensory impairments, including persons who are deaf, diabetic, and the like, by detecting a tagged entity as it enters the space around an individual, or by detecting environmental stimuli, such as excessive heat in an individual's proximity or vital sign changes, and sounding an alarm.

Abstract: A transceiver preferably embedded within a wearable security watch, PDA, or other device which achieves a variety of wireless ultrasonic and/or radio-frequency based functions, including digital identification and proximity and sensation monitoring of assets, individuals, pets, and the like. The portable or wearable device realizes these functions by periodically polling and receiving information tags within the transmitting distance of the device. The invention can help reduce the likelihood of the theft, loss, or misplacement by detecting that a tag associated with or attached to an entity has left an individual's proximity and sounding an alarm. The device can also assist individuals with sensory impairments, including persons who are deaf, diabetic, and the like, by detecting a tagged entity as it enters the space around an individual, or by detecting environmental stimuli, such as excessive heat in an individual's proximity or vital sign changes, and sounding an alarm.

Abstract: A build-up structure for chip to chip interconnects and System-In-Package utilizing multi-angle vias for electrical and optical routing or bussing of electronic information and controlled CTE dielectrics including mesocomposites to achieve optimum electrical and optical performance of monolithic structures. Die, multiple die, Microelectromechanical Machines (MEMs) and/or other active or passive components such as transducers or capacitors can be accurately positioned on a substrate such as a copper heatsink and multi-angle stud bumps can be placed on the active sites of the components. A first dielectric layer is preferably placed on the components, thereby embedding the components in the structure. Through various processes of photolithography, laser machining, soft lithography or anisotropic conductive film bonding, escape routing and circuitry is formed on the first metal layer.

Abstract: A build-up structure for chip to chip interconnects and System-In-Package utilizing multi-angle vias for electrical and optical routing or bussing of electronic information and controlled CTE dielectrics including mesocomposites to achieve optimum electrical and optical performance of monolithic structures. Die, multiple die, Microelectromechanical Machines (MEMs) and/or other active or passive components such as transducers or capacitors can be accurately positioned on a substrate such as a copper heatsink and multi-angle stud bumps can be placed on the active sites of the components. A first dielectric layer is preferably placed on the components, thereby embedding the components in the structure. Through various processes of photolithography, laser machining, soft lithography or anisotropic conductive film bonding, escape routing and circuitry is formed on the first metal layer.

Abstract: A build-up structure for chip to chip interconnects and System-In-Package utilizing multi-angle vias for electrical and optical routing or bussing of electronic information and controlled CTE dielectrics including mesocomposites to achieve optimum electrical and optical performance of monolithic structures. Die, multiple die, Microelectromechanical Machines (MEMs) and/or other active or passive components such as transducers or capacitors can be accurately positioned on a substrate such as a copper heatsink and multi-angle stud bumps can be placed on the active sites of the components. A first dielectric layer is preferably placed on the components, thereby embedding the components in the structure. Through various processes of photolithography, laser machining, soft lithography or anisotropic conductive film bonding, escape routing and circuitry is formed on the first metal layer.

Abstract: A build-up structure for chip to chip interconnects and System-In-Package utilizing multi-angle vias for electrical and optical routing or bussing of electronic information and controlled CTE dielectrics including mesocomposites to achieve optimum electrical and optical performance of monolithic structures. Die, multiple die, Microelectromechanical Machines (MEMs) and/or other active or passive components such as transducers or capacitors can be accurately positioned on a substrate such as a copper heatsink and multi-angle stud bumps can be placed on the active sites of the components. A first dielectric layer is preferably placed on the components, thereby embedding the components in the structure. Through various processes of photolithography, laser machining, soft lithography or anisotropic conductive film bonding, escape routing and circuitry is formed on the first metal layer.

Abstract: A transceiver preferably embedded within a wearable security watch, PDA, or other device which achieves a variety of wireless ultrasonic and/or radio-frequency based functions, including digital identification and proximity and sensation monitoring of assets, individuals, pets, and the like. The portable or wearable device realizes these functions by periodically polling and receiving information tags within the transmitting distance of the device. The invention can help reduce the likelihood of the theft, loss, or misplacement by detecting that a tag associated with or attached to an entity has left an individual's proximity and sounding an alarm. The device can also assist individuals with sensory impairments, including persons who are deaf, diabetic, and the like, by detecting a tagged entity as it enters the space around an individual, or by detecting environmental stimuli, such as excessive heat in an individual's proximity or vital sign changes, and sounding an alarm.