Abstract: A method for providing a high temperature imaging resist layer for use in a multilayer resist system. A relatively thick planarizing resist layer is coated onto a suitable substrate to provide a planarizing resist layer having a planar surface. A relatively thin layer of a solvent soluble polysilsesquioxane polymer resist is applied to the planar surface to form an imaging resist which remains solvent soluble at temperatures up to 250.degree. C. The hydroxyl or alkoxy content of the polysilsesquioxane must be 0.05 weight percent or less in order to prevent cross linking of the polysilsesquioxane. The polysiloxane polymer resist is prepared by hydrolizing and polymerizing trichlorosilanes having the formula RSiCl.sub.3 where R is methyl, phenyl, vinyl, n-butyl, t-butyl, chlorophenyl, or chloromethyl-phenyl. The hydroxyl content of the polysilsesquioxane is reduced to 0.05 weight percent by capping the polymer with monoreactive silanes.

Abstract: The present invention relates to a process for forming an image with a positive resist, said process involves the steps of forming on a substrate a positive resist layer of poly(methacrylic anhydride). The resist layer baked at a temperature of 200.degree. C. to 350.degree. C. and thereafter irradiated with a pedetermined pattern of ionizing radiation. The irradiated area is then developed utilizing a developer solvent that is composed of solution of a base selected from the group consisting of alkali metal hydrozides, ammonium hydroxides (including quarternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C.sub.1 -C.sub.12 carbon content and water or mixtures thereof; and rinsing the resist with the same solvent selected above.

Abstract: The invention is directed to a method for obtaining a developer solvent for radiation-sensitive negative resists which are used in lithographic processes for the production of electronic microchips.The negative resist polymer is applied to the surface of the microchip substrate directly, or through an appropriate bonding agent layer, in any conventional manner suitable to the particular polymer. Once the resist polymer coating is obtained on the substrate, the resist polymer is irradiated using a suitable radiation source to obtain a latent image therein. The latent image exists within the polymeric resist coating in the form of crosslinked polymer surrounded by areas of nonirradiated, non-crosslinked polymer which must be removed in order to develop the image, thus producing the desired resist pattern on the substrate.

Abstract: This invention provides a process, and delineates typical materials to be used in that process, which enables the use of a precision radiation source to produce a microcircuit resist image accurate to a few micrometers or even fractions of a micrometer. In addition, the process of the invention provides for the dry development of this image, thus insuring the ability to create a finished resist structure exhibiting the same accuracy in dimensions.Specifically, the invention provides a process in which a positive or negative resist polymer is irradiated under low pressure using a precision radiation source such as an electron beam, masked ion beam, or focused ion beam to generate organic free radicals. After irradiation, the reactive resist polymer is exposed to oxygen or air to create peroxides or hydroperoxides.

Abstract: The invention is directed to a process for preparation of a negative resist configuration on a siliceous substrate.A negative resist polymer is bonded to the siliceous substrate using an intermediary interlayer of silane between the substrate and the resist polymer. The silane is applied to the siliceous substrate and the silane-coated surface is heated to accomplish bonding; the resist polymer is then applied as an overlay on the silane-coated surface and the resist polymer surface is irradiated to form an image therein and simultaneously to bond the resist polymer image to the silane-coated surface.

Abstract: The invention is directed to a process for preparation of a negative resist configuration on a siliceous substrate.A negative resist polymer is bonded to the siliceous substrate using an intermediary interlayer of silane between the substrate and the resist polymer. The silane is applied to the siliceous substrate and the silane-coated surface is heated to accomplish bonding; the resist polymer is then applied as an overlay on the silane-coated surface and the resist polymer surface is irradiated to form an image therein and simultaneously to bond the resist polymer image to the silane-coated surface.

Abstract: Disclosed is a method of pretreating a semiconductor wafer so that a solution coating of a positive resist of poly(methacrylic anhydride) can be directly applied to the treated surface. A typical semiconductor wafer of silicon is first precoated with a thin layer of poly(t-butyl methacrylate) and then heated to convert the poly(t-butyl methacrylate) to the anhydride. The thickness of this anhydride-precursor layer is less than about 1,000 Angstroms. Next, there is applied to the surface of the precursor layer a solution of the poly(methacrylic anhydride) dissolved in, for example, dimethylacetamide, dimethylformamide, or N-methylprrolidione. Such solvents, which are not capable of adequately wetting the silicon surface directly, are capable of wetting the precursor layer comprising poly(methacrylic anhydride), thus ensuring a uniform deposit of poly(methacrylic anhydride) upon the treated surface of the wafer.

Abstract: Negative working resists, prepared from poly(vinylpyridine) polymers which exhibit good sensitivities to 20 keV electron beam radiation, are disclosed. The poly(vinylpyridine) polymers of this invention may contain alkyl substituents on the pyridine rings in ortho, meta or para positions with respect to the nitrogen atom within said ring.

Abstract: An improved package for photopolymerized recording materials is disclosed. The package consists essentially of a cover plate, a substrate spaced apart from said cover plate, at least one of the said cover plate or said substrate having a coating on an internal surface of a photopolymerizable compound or a catalyst therefore, and fluid ingress means for introducing fluid into the space between said cover plate and said substrate. In a particularly preferred embodiment the ingress means is associated with a collapsible vessel located outside the basic package. Also disclosed are methods for using the package such as in holographic nondestructive testing.