Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.

Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract: A food cooking and heating cabinet having a closed air convection system consisting of a variable speed blower in a air heating chamber for circulating air past a variable heating element, through a food holding oven, and back to the air heating chamber, a control for selecting a desired temperature to be maintained in the food holding oven, and means for comparing the temperature at the outlet and the inlet of the heating chamber to the selected temperature causing the air variable heating element to operate and the speed of the blower to increase when more heat is required and reduces both heat and blower speed as the need for the higher heat and air flow is no longer required, and when preset parameters are reached automatically sets the temperature to a preset temperature and holds the heated product to the predetermined temperature.

Abstract: A toss game assembly includes a plurality of game targets that can advantageously be disassembled and stored during non-operating conditions. Each targets includes a top member provided with an aperture, a rear member provided with a plurality of slots, and a pair of side members having flange portions integral therewith and engageable with select ones of the plurality of slots. The assembly further includes a beverage supporting section removably attachable to the rear member for conveniently maintaining beverage vessels thereon. A plurality of mobile members can be repeatedly tossed between the plurality of targets and into the respective apertures.

Abstract: A hot gas defrost system for a refrigeration cycle, including at least a compressor, reversing valve, condenser and evaporator. During defrost, the reversing valve directs the superheated refrigerant from the compressor to the evaporator. The hot gas traverses the evaporator coil which, in turn, causes the ice or frost to melt. The hot gas defrost refrigeration system may also include a receiver to store the refrigerant during the refrigeration and defrost cycles.

Abstract: A hot gas defrost system for a refrigeration cycle, including at least a compressor, reversing valve, condenser and evaporator. During defrost, the reversing valve directs the superheated refrigerant from the compressor to the evaporator. The hot gas traverses the evaporator coil which, in turn, causes the ice or frost to melt. The hot gas defrost refrigeration system may also include a receiver to store the refrigerant during the refrigeration and defrost cycles.

Abstract: An illuminated rock and method having the external appearance of a rock and having a light source inside which transmits light through openings in the rock to an outside viewer. Preferably, the light passes through a diffusion screen so as to obscure the actual light element from view, while allowing sufficient light to pass through the design. It is preferred that the design be in the form of a street number, with the illuminated rock being placed proximate a front portion of a home so that the street number may be viewed at night.

Abstract: A hot gas defrost system for a refrigeration cycle, including at least a compressor, reversing valve, condenser and evaporator. During defrost, the reversing valve directs the superheated refrigerant from the compressor to the evaporator. The hot gas traverses the evaporator coil which, in turn, causes the ice or frost to melt. The hot gas defrost refrigeration system may also include a receiver to store the refrigerant during the refrigeration and defrost cycles.

Abstract: A sealed, closed end heat pipe efficiently warms the drain for an evaporator so that condensation may flow unobstructed away from the evaporator in the refrigeration circuit. An evaporator end of the heat pipe is exposed to ambient air and a condenser end is located close to the drain inlet adjacent the evaporator. Thus, no external power source is required as fluid within the evaporator end is heated to vapor phase and circulates toward the condenser end, and cooled fluid from the condenser end returns to the evaporator end.

Abstract: An evaporative condenser having a cylindrical fiberglass housing which provides a circumferential air flow across a plurality of concentrically oriented spiral condensing coils. The planar spiral coils are generated through the compression of a conical winding of tubing formed about a multi-tiered platform, to form an evenly-spaced spiral condensing coil. Each layer of tubing is affixed to a plurality of radial braces, which provide the evaporative coils with sufficient structural integrity to be individually employed. A method and apparatus for producing spiral coils having uniform spacing between adjacent revolutions.

Abstract: An air cooler having coolant tubes, a drain, a pair of coolant tube supports and a defroster for preventing condensate in the drain from freezing. The coolant tube supports include a vertical plate provided with a pair of horizontally spaced notches for supporting the defroster. The notches open to the lower edge of the plate and converge towards one another.