Abstract: A semiconductor ridge diode laser, capable of providing a single mode, high power laser output having a low divergence in the far field, comprised of a plurality of semiconductor layers having three quantum wells therein. The layers of the diode laser are doped such that the PN junction occurs in or near the center quantum well. A pair of graded index layers surround each quantum well to provide transverse optical confinement. In addition to linear grading of the index of refraction in the graded index layers, stepped changes in the index of refracton or other profile types changes such as a parabolic grading may also be used. The P-side of the diode laser is etched to form a ridge with which electrical contact may be maintained to confine the optical signals laterally.

Abstract: There is provided by this invention a semiconductor laser which achieves high-power operation due to full aperture emission from a broad emitting facet. The semiconductor laser's full aperture emission is enabled by the physical structure and alignment of the semiconductor layers which are deposited upon the corrugated substrate.