Abstract: The present invention relates to a focal plane array having a substrate wafer; an n-type indium arsenide layer disposed atop the substrate wafer; a barrier layer disposed atop the substrate wafer; and a doped n-type layer disposed atop the barrier layer. The present invention further relates to a focal plane array, having a substrate wafer; an n-type indium arsenide layer disposed atop the substrate wafer; and a p-type indium arsenide layer positioned at a first surface of the n-type indium arsenide layer opposite an interface surface of the n-type indium arsenide and the substrate wafer.

Abstract: An optical element includes an optical block constructed of a first material having a % transmission of at least 50% throughout a spectral range of 300 nm to 2700 nm through at least a thickness of the optical block. The optical block comprises a surface. A grating layer constructed of a second material is disposed on the surface of the optical block, the grating layer comprising a first surface that is directly in contact with the surface of the optical block and a second surface comprising a plurality of diffraction features forming a diffraction grating.