Abstract: A bin washer device for washing bins including a conveyor for moving the bins in a conveying direction, a support and at least two bin holders rotatably supported on the support for rotation about an axis adjacent the conveyor.

Abstract: A method for undermounting a sink to a countertop includes preparing a countertop and a sink. Thereafter a primary channel is routed within the backside of the countertop, the primary channel including a base and being shaped and dimensioned for receipt of the sink flange, and a secondary channel is routed within the base of the primary channel along an interior circumference of the primary channel. Substrate material is then removed from the secondary channel to expose an underside of the decorative laminate and adhesive is applied within the secondary channel so that the underside of the decorative laminate is fully covered. A bead of adhesive is applied to the base of the primary channel and the sink flange is placed within the primary channel. A support plate is secured around the sink flange to provide support and a central portion of the countertop defined by the primary channel is cut out to expose the bowl of the sink.

Abstract: A bin washer device disposed along a conveyor that moves bins, includes a support and at least two bin holders, preferably three bin holders, rotatably supported on the support above the conveyor. Two left sprays are provided outside the path of the bin holders and at angles that are perpendicular to one another. Similarly, two right sprays are provided outside the path and at angles perpendicular to one another. The right sprays minor the left sprays whereby that all sides of a bin are washed. A method includes stopping rotation of the support, discharging a bin from a first bin holder and receiving a bin into the first bin holder. The support is then rotated and the bins in the bin holders are washed. The support is again stopped and a bin a discharged from a second bin holder, and a next bin is received in the second bin holder. The support is then rotated and the bins in the bin holders are washed. These steps are repeated for each bin holder and/or until all of the bins have been washed.

Abstract: A method for undermounting a sink to a countertop includes preparing a countertop and a sink. Thereafter a primary channel is routed within the backside of the countertop, the primary channel including a base and being shaped and dimensioned for receipt of the sink flange, and a secondary channel is routed within the base of the primary channel along an interior circumference of the primary channel. Substrate material is then removed from the secondary channel to expose an underside of the decorative laminate and adhesive is applied within the secondary channel so that the underside of the decorative laminate is fully covered. A bead of adhesive is applied to the base of the primary channel and the sink flange is placed within the primary channel. A support plate is secured around the sink flange to provide support and a central portion of the countertop defined by the primary channel is cut out to expose the bowl of the sink.

Abstract: Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Abstract: Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Abstract: A method of dispensing a fluid comprising (a) aspirating a first fluid volume into a dispenser adapted to dispense fluid volumes of one microliter or less; (b) dispensing a desired volume of the fluid volume to form a dispensed portion; (c) calculating the volume of the dispensed portion; and (d) calculating an adjusted desired volume that compensates for a difference between the desired volume and the volume of the dispensed portion.

Abstract: A method of dispensing a fluid comprising (a) aspirating a first fluid volume into a dispenser adapted to dispense fluid volumes of one microliter or less; (b) dispensing a desired volume of the fluid volume to form a dispensed portion; (c) calculating the volume of the dispensed portion; and (d) calculating an adjusted desired volume that compensates for a difference between the desired volume and the volume of the dispensed portion.

Abstract: A fluid distribution system comprising a table, an alignment stage, and a plurality of processing stations. The table can be configured to engage at least one of a plurality of microplates and can be movable at least in an X-axis direction. The alignment stage can be configured to move the table at least in a Y-axis direction that differs from the X-axis direction. The plurality of processing stations comprises at least one or more dispensing stations and a plate-handling station. Each of the one or more dispensing stations comprises a dispensing device adapted to dispense fluid into or onto one or more of a plurality of microplates, and the plate-handling station comprises a plate-handling device adapted to selectively pick up and deposit on the table individual microplates from a plurality of microplates, at least one at a time.

Abstract: Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Abstract: Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Abstract: Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: Systems and methods are provided for selectively removing unwanted material from a surface of a semiconductor wafer without causing damage to or etching of underlying portions of the semiconductor. One embodiment of the invention includes the use of reactive species from a plasma source to facilitate the removal of residues remaining after metal etching on a silicon wafer, where the gases employed in creating the plasma include hydrogen, halogens such as fluorine, and little or no oxygen.

Abstract: Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.