Abstract: An environmentally protected housing for receiving a connector block in which a multiplicity of central office protector modules can be mounted. The housing is designed such that its surface area is slightly larger than the surface area of the connector block and when the block and modules are mounted in the housing the top of the modules is just below the cover of the housing. Telephone cables which are used to connect to the cables from the central office and from the subscribers enter the housing and are wired to the rear of the connector block. The connector block is mounted in the housing and the modules are placed therein. A potting compound is then poured in the bottom of the housing to thereby environmentally seal the terminals and connections thereto on the rear of the protector block. The housing has a cover which has a suitable seal on its inside surface. The closing of the cover provides the environmentally protected housing.

Abstract: A barrier for a wire gripping device of the type wherein a tapered jaw assembly is slideably mounted within a tapered tubular shell defining an axis and having an opening at one axial end thereof, and wherein a pilot cup is disposed in the end opening for surroundingly engaging a terminal end of a cable to be introduced into the gripping device for gripping engagement by the jaw assembly therewithin, and also having a compression spring having one end in engagement with an end surface of the tapered jaw assembly opposite the end opening of the shell. The barrier comprises a unitary-part member disposed in the shell at a location spaced apart from the end opening by an amount at least as great as the combined axial extent of the jaw assembly and compression spring when the latter is fully extended.

Abstract: The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.

Abstract: A method of reducing the time and temperature for either flowing or re-flowing a glass layer on a semiconductor device is described. The method involves conducting the flow or re-flow process steps at an elevated pressure which reduces both the time and the temperature required to achieve proper flow and re-flow characteristics.

Abstract: The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.

Abstract: A comb filter comprising a charge transfer device (CTD) structure for separating frequency interleaved luminance and chrominance components of a composite color television signal directly within the CTD structure. The CTD structure has first and second pairs of input sections of substantially identical geometry, one input section of the second pair being preceded by a signal inverter. Signal charge as applied to the first and second input pairs are delayed such that signal charge from the first input pair exhibits a 1H delay relative to signal charge from the second input pair, when the signal charge from the respective input pairs are combined with each other.

Abstract: A digital memory may be addressed with an analog signal utilizing a circuit comprising a digital to analog converter. A comparator compares the output of the digital to analog converter to the analog address signal. The output of the comparator is coupled to means for incrementing and decrementing a digital number in response to that output. The digital number incrementing and decrementing means has an output which is coupled to the addressing input of the digital memory. Switch means alternately connects the input of the digital to analog converter to either the output of the random access memory or the output of the means for changing the digital number.

Abstract: An arrangement of charge transfer devices comprising a main signal transfer path defined by first and second sets of charge transfer electrodes, and an auxiliary path independent of the main path including a predetermined number of electrodes. Capacitances are respectively associated with the electrodes forming the first and second sets of electrodes of the main path, and with the electrodes of the auxiliary path. The electrodes of the auxiliary path are connected to the one of the sets of electrodes of the main channel to establish a desired relationship (e.g., balance) between the capacitances of the first and second sets of electrodes.

Abstract: A concrete form assembly comprises spaced apart form members that are retained in position during concrete pouring by an arrangement that includes spacer elements, plastic tie rods, and anchors. The anchors are on the outsides of the forms and grip the tie rods. Each anchor comprises a tapered jaw cluster in a tapered shell so arranged that outward forces applied to the forms due to concrete being poured therebetween increases the grip of the anchors on the tie rods to retain the forms at the established spacing.

Abstract: The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.