Abstract: A method for imparting damage resistance to a coating, film or article of manufacture comprising adding crosslinked polymeric nanoparticles having a size range of 1-100 nm in diameter to said coating, film or article of manufacture.

Abstract: Porous thermoset dielectric materials having low dielectric constants useful in electronic component manufacture are provided along with methods of preparing the porous thermoset dielectric materials. Also provided are methods of forming integrated circuits containing such porous thermoset dielectric material.

Abstract: Methods of preparing porous optical materials are provided. These methods allow for the selection of the desired pore size and level of porosity in the porous optical material. Such methods utilize a preformed polymeric porogen.

Abstract: Disclosed are methods of preparing solution polymers and compositions derived therefrom.

Abstract: Disclosed are stable organo polysilica resin composition containing a B-staged organo polysilica resin and an organic acid, methods of stabilizing such B-staged organo polysilica resin compositions and methods of manufacturing electronic devices using such stable compositions.

Abstract: A method for imparting damage resistance to a coating, film or article of manufacture comprising adding crosslinked polymeric nanoparticles having a size range of 1-100 nm in diameter to said coating, film or article of manufacture.

Abstract: A method for making a viscosity index improving copolymer includes heating a reaction mixture including from about 55 weight percent to about 99.5 weight percent of a first monomer selected from the group consisting of (C8-C15)alkyl (meth)acrylates and mixtures thereof, from about 0.5 weight percent to about 45 weight percent of a second monomer selected from the group consisting of (C1-C7)alkyl (meth)acrylates, (C16-C24)alkyl(meth)acrylates and mixtures thereof, a polymerization initiator and a hydrocarbon diluent, to a reaction temperature from about 75° C. to about 100° C. and maintaining the reaction mixture at the reaction temperature for a period of time effective to allow copolymerization of the monomers.

Abstract: Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

Abstract: Disclosed are stable organo polysilica resin composition containing a B-staged organo polysilica resin and an organic acid, methods of stabilizing such B-staged organo polysilica resin compositions and methods of manufacturing electronic devices using such stable compositions.

Abstract: Porous dielectric materials having low dielectric constants, ≧30% porosity and a closed cell pore structure are disclosed along with methods of preparing the materials. Such materials are particularly suitable for use in the manufacture of electronic devices.

Abstract: Methods of preparing porous optical materials are provided. These methods allow for the selection of the desired pore size and level of porosity in the porous optical material. Such methods utilize a preformed polymeric porogen.

Abstract: Disclosed are methods of preparing solution polymers and compositions derived therefrom.

Abstract: Disclosed are new antireflective compositions including cross-linked polymeric particles including one or more chromophores. Also disclosed are methods of forming relief images using these antireflective compositions.

Abstract: Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

Abstract: Porous dielectric materials having low dielectric constants, ≧30% porosity and a closed cell pore structure are disclosed along with methods of preparing the materials. Such materials are particularly suitable for use in the manufacture of electronic devices.

Abstract: A method for making a viscosity index improving copolymer includes heating a reaction mixture including from about 55 weight percent to about 99.5 weight percent of a first monomer selected from the group consisting of (C8-C15)alkyl (meth)acrylates and mixtures thereof, from about 0.5 weight percent to about 45 weight percent of a second monomer selected from the group consisting of (C1-C7)alkyl (meth)acrylates, (C16-C24)alkyl(meth)acrylates and mixtures thereof, a polymerization initiator and a hydrocarbon diluent, to a reaction temperature from about 75° C. to about 100° C. and maintaining the reaction mixture at the reaction temperature for a period of time effective to allow copolymerization of the monomers.

Abstract: Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

Abstract: Disclosed are new antireflective compositions including cross-linked polymeric particles including one or more chromophores. Also disclosed are methods of forming relief images using these antireflective compositions.

Abstract: Porous polyimide dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous polyimide dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous polyimide dielectric material.

Abstract: Porous organo polysilica dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous organo polysilica dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous organo polysilica dielectric materials.