Abstract: A wireless transmitter and antenna are provided on the transmit side, and a receiver and an antenna are provided on the receive side. A transmitter receives samples from a video source via media signals, permutes the input samples into input vectors, and encodes each input vector with reference to a set of orthogonal codes to produce analog SSVT signals per encoder. The wireless transmitter modulates the SSVT signals generated by the SSVT transmitter onto one or more carrier frequency signals. Once modulated, the carrier frequency signals are then broadcast by the antenna. On the receive side, the antenna receives the broadcast and provides the modulated carrier signals to the wireless receiver. In response, the wireless receiver demodulates the carrier frequency signals and produces the corresponding analog SSVT signals, which are then decoded into reconstructions of the input media samples into output vectors, which are then permuted into output samples that are sent to a video sink for display.

Abstract: A system for three-dimensional range mapping of an object or objects is provided, the system comprising: a Light Detection and Ranging (LIDAR) system, the LIDAR system including an array of light beam emitters, at least one detector element, and a computational unit, the computational unit configured to: instruct the light beam emitters to simultaneously emit emitted light beams; embed ranging information in the emitted light beams; identify each emitted light beam with a unique orthogonal waveform; auto-correlate the unique orthogonal waveform in each reflected beam received at each detector element with the unique orthogonal waveforms in the emitted light beams to provide emitted and reflected light beam pairs; determine a time of flight for each emitted and reflected light beam pair; and determine a range from the time of flight.

Abstract: The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period.

Abstract: A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure.

Abstract: The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period.

Abstract: A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part and a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes a sensing part with variation in secondary attribute according to heat and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part.

Abstract: A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure.

Abstract: A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.

Abstract: A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part; a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes: a sensing part with variation in secondary attribute (for example, in electrical resistance property) according to heat; and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part.

Abstract: An image sensor for detecting a wide spectrum includes a plurality of infrared ray receiving layers which individually receive infrared rays having different wavelengths for each pixel, the plurality of infrared ray receiving layers stacked to each other. The image sensor, which is an integrated image sensor where at least two micro bolometers are stacked, acquires spectrum information about visible rays and near-infrared rays as well as two or more infrared rays applied on an object, without mechanical/thermal/optical distortion, and provides the spectrum information to a silicon-based semiconductor such as a photodiode, thereby improving photoelectric conversion efficiency.

Abstract: A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion.

Abstract: A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.

Abstract: Provided are an image sensor for detecting a wide spectrum, including a plurality of infrared ray receiving layers which individually receive infrared rays having different wavelengths for each pixel, the plurality of infrared ray receiving layers stacked to each other, and a manufacturing method thereof. The image sensor, which is an integrated image sensor where at least two micro bolometers are stacked, acquires spectrum information about visible rays and near-infrared rays as well as two or more infrared rays applied on an object, without mechanical/thermal/optical distortion, and provides the spectrum information to a silicon-based semiconductor such as a photodiode, thereby improving photoelectric conversion efficiency.