Abstract: A system measures parameters of the electricity drawn by an arc furnace and, based on an analysis of the parameters, provides indicators of whether arc coverage has been optimized. Factors related to optimization of arc coverage include electrode position, charge level, slag level and slag behaviour. More specifically, such indicators of whether arc coverage has been optimized may be used when determining a position for the electrode such that, to an extent possible, a stable arc cavity is maintained and an open arc condition is avoided. Conveniently, by avoiding open arc conditions, the internal linings of the furnace walls and roof may be protected from excessive wear and tear.

Abstract: A system measures parameters of the electricity drawn by an arc furnace and, based on an analysis of the parameters, provides indicators of whether arc coverage has been optimized. Factors related to optimization of arc coverage include electrode position, charge level, slag level and slag behaviour. More specifically, such indicators of whether arc coverage has been optimized may be used when determining a position for the electrode such that, to an extent possible, a stable arc cavity is maintained and an open arc condition is avoided. Conveniently, by avoiding open arc conditions, the internal linings of the furnace walls and roof may be protected from excessive wear and tear.

Abstract: This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

Abstract: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

Abstract: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

Abstract: A device for holding and drying apparel includes a foldable panel being convertible between an unfolded open arrangement or a folded closed arrangement, said foldable panel having at least one compartment disposed therefrom for receiving at least one item of said apparel, said foldable panel and compartment further including a series of open drying spaces for exposing said apparel to ambient air flow for drying thereof, and at least one support portion for carrying and/or hanging said apparel therefrom.

Abstract: An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device.

Abstract: This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

Abstract: An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device.